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MMBT3904TT1

Onsemi

MMBT3904TT1 by Onsemi

MMBT3904TT1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. With a small outline package style and Gull Wing terminal form, it operates at up to 150°C.

Median Price

$0.010

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 318,345 parts In-Stock

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$0.010

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$0.010

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318,345

$0.010

$0.010

$0.010

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Digiode

USA . 1,324 parts In-Stock

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$0.010

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1,324

$0.010

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TEDSS.com

USA . 1,830 parts In-Stock

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$0.500

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$0.250

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1,830

$0.500

$0.250

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Chip Stock

USA . 612,500 parts In-Stock

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612,500

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DF Sales Co.

USA . 15,000 parts In-Stock

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DF Sales Co.

USA . 15,000 parts In-Stock

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Vyrian

USA . 11,045 parts In-Stock

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Prism Electronics

USA . 3,607 parts In-Stock

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Electronic Expediters

USA . 3,000 parts In-Stock

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Bristol Electronics

USA . 2,941 parts In-Stock

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Atlantic Semiconductor

USA . 2,941 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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ComSIT USA

USA . 2,000 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Ampacity Inc.

Singapore . 317,914 parts In-Stock

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$0.009

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Corphita

USA . 1,551 parts In-Stock

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$0.009

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Corohmni

South Africa . 403 parts In-Stock

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$0.010

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403

$0.010

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Aztec Data Supply Inc.

USA . 4,085 parts In-Stock

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$0.375

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$0.375

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AZTECH Wire

Italy . 400 parts In-Stock

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$20.530

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

USA . 11,640 parts In-Stock

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Kulean Microsystems

USA . 6,501 parts In-Stock

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Continental Prestige Electronics

USA . 4,780 parts In-Stock

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SupplyDigital Components

Austria . 3,778 parts In-Stock

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TANS Electronics

Latvia . 1,726 parts In-Stock

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Argo Parts USA

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Problanco Electronics

Mexico . 1,102 parts In-Stock

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UHIMA Technologies

Türkiye . 143 parts In-Stock

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Aranea Global

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Overview

Discover the MMBT3904TT1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted industry leader, this NPN transistor is ideal for amplifier applications. With its compact package, high power dissipation, and impressive operating temperature range, the MMBT3904TT1 delivers exceptional value and benefits to customers. Whether you're looking for a reliable component for your electronic project or seeking a high-performance solution for your amplifier needs, the MMBT3904TT1 by Onsemi is the perfect choice.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration in circuits and ensures compatibility with other components.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to work with for designers.

Transistor Application: AMPLIFIER

Designed specifically for use in amplifiers, ensuring optimal performance in amplification applications.

Surface Mount: YES

The surface mount feature allows for easy installation and saves space on the PCB.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating provides versatility and allows for use in a wide range of voltage applications.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency ensures fast operation and high-frequency response in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT3904TT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MMBT3904TT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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