Loading...

BC847BTT1

Onsemi

BC847BTT1 by Onsemi

BC847BTT1 by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 200, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150 °C, with Vce(max) of 45V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

54,000

-

-

-

-

ComSIT USA

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

R&J Components

USA . 12,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,008

-

-

-

-

Vyrian

USA . 6,890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,890

-

-

-

-

Zilex Electronics Inc.

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

PC Components Company LLC

USA . 2,357 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,357

-

-

-

-

Digiode

USA . 2,147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,147

-

-

-

-

Bristol Electronics

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,300

-

-

-

-

Prism Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 350 parts In-Stock

1+ parts

$18.490

100+ parts

-

1k+ parts

-

10k+ parts

-

350

$18.490

-

-

-

TANS Electronics

Latvia . 3,861 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,861

-

-

-

-

SupplyDigital Components

Austria . 2,617 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,617

-

-

-

-

Corphita

USA . 1,349 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,349

-

-

-

-

Problanco Electronics

Mexico . 1,033 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,033

-

-

-

-

Northwest PG Solutions

USA . 731 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

731

-

-

-

-

Native Components

USA . 607 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

607

-

-

-

-

UHIMA Technologies

Türkiye . 516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

516

-

-

-

-

Kulean Microsystems

USA . 185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

185

-

-

-

-

Corohmni

South Africa . 125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

125

-

-

-

-

Perfect Parts

USA . 112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

112

-

-

-

-

Overview

Enhance your electronics projects with the BC847BTT1 by Onsemi, a high-quality NPN bipolar junction transistor designed for amplification applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this small signal BJT offers exceptional performance and reliability. With a maximum power dissipation of 0.15W and a DC current gain of 200, this transistor provides excellent value and benefits for your circuit design needs. Whether you're a hobbyist or a professional, the BC847BTT1 is the perfect choice for your amplifier projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering reliable performance.

Configuration: SINGLE

Simplified circuit design and easy integration into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio and signal processing applications.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and improving overall efficiency.

Package Shape: RECTANGULAR

Compact design that fits well within electronic devices and circuit layouts.

Maximum Power Dissipation (Abs): 0.15 W

Efficiently handles power dissipation, reducing the risk of overheating and component damage.

Minimum DC Current Gain (hFE): 200

Provides high current gain, ensuring stable and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature conditions, suitable for various environments.

Maximum Collector-Emitter Voltage: 45 V

Handles relatively high voltage levels, making it versatile for different voltage requirements in circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance characteristics, such as low leakage and high reliability.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, suitable for many small signal applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and ensures reliable connections during assembly.

Nominal Transition Frequency (fT): 100 MHz

Capable of high-frequency operation, making it suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BTT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847BTT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20