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BC547BTFR

Fairchild Semiconductor

BC547BTFR by Fairchild Semiconductor

Fairchild Semiconductor's BC547BTFR is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications, it offers a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V.

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Overview

Enhance your electronic projects with the BC547BTFR by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-notch quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum power dissipation of 0.625W and a minimum DC current gain of 200. With a maximum collector-emitter voltage of 45V and a maximum operating temperature of 150°C, this NPN transistor provides superior performance. Trust Fairchild Semiconductor to provide you with the best components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN type allows for easy integration in a wide range of electronic circuits and applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for tasks that require fast on/off operations.

Package Shape: ROUND

Round shape provides easy mounting and efficient use of board space.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy and secure soldering onto circuit boards.

Maximum Power Dissipation (Abs): 0.625 W

High power dissipation rating allows for reliable operation under various load conditions.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and efficient design for space-constrained applications.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures efficient amplification of weak signals.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures stable performance even in challenging environments.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating allows for operation in a wide range of voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high conductivity and reliability for optimal transistor performance.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows for handling of moderate current levels in the circuit.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and long-term reliability for the terminals.

Terminal Position: BOTTOM

Bottom terminal position enhances ease of mounting and connection within the circuit.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency allows for efficient high-frequency signal processing and switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547BTFR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC547BTFR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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