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BCX5610H6327XTSA1

Infineon Technologies

BCX5610H6327XTSA1 by Infineon Technologies

BCX5610H6327XTSA1 by Infineon is a NPN BJT transistor with 80V VCEO, 1A IC, and 2W Ptot. Ideal for amplifier applications, it has a hFE of 63 and fT of 100MHz. This small outline package with flat terminals operates up to 150°C, making it suitable for various electronic designs.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 20 parts In-Stock

1+ parts

$1.280

100+ parts

$1.165

1k+ parts

$1.050

10k+ parts

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20

$1.280

$1.165

$1.050

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Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.120

3,000

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-

$0.120

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.130

1k+ parts

$0.107

10k+ parts

$0.096

3,000

-

$0.130

$0.107

$0.096

Distributors (In-Stock)

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Digiode

USA . 32 parts In-Stock

1+ parts

$0.101

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32

$0.101

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Vyrian

USA . 7,312 parts In-Stock

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7,312

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NAC Semi

USA . 1,000 parts In-Stock

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$0.475

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1,000

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$0.475

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VNN

France . 882 parts In-Stock

1+ parts

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882

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Semi Source

USA . 692 parts In-Stock

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TME

Poland . 160 parts In-Stock

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$0.216

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$0.180

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160

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$0.216

$0.180

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 21,993 parts In-Stock

1+ parts

$0.090

100+ parts

-

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21,993

$0.090

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Semicontronic

India . 20,424 parts In-Stock

1+ parts

$0.090

100+ parts

$0.088

1k+ parts

$0.087

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20,424

$0.090

$0.088

$0.087

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Corphita

USA . 681 parts In-Stock

1+ parts

$0.095

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681

$0.095

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Modulus Dynamics

Lithuania . 18,522 parts In-Stock

1+ parts

$0.212

100+ parts

$0.204

1k+ parts

$0.195

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18,522

$0.212

$0.204

$0.195

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Corohmni

South Africa . 507 parts In-Stock

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$0.212

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507

$0.212

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Aztec Data Supply Inc.

USA . 3,816 parts In-Stock

1+ parts

$0.376

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3,816

$0.376

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.280

100+ parts

$1.165

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$1.050

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20

$1.280

$1.165

$1.050

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AZTECH Wire

Italy . 899 parts In-Stock

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$17.160

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899

$17.160

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Andel Nordic

Denmark . 49 parts In-Stock

1+ parts

$26.520

100+ parts

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$18.567

10k+ parts

$18.567

49

$26.520

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$18.567

$18.567

Perfect Parts

USA . 86,240 parts In-Stock

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86,240

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Component Stockers USA

USA . 9,859 parts In-Stock

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$0.200

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$0.270

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$0.170

9,859

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$0.200

$0.270

$0.170

Eastek

USA . 7,000 parts In-Stock

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Microchip USA

USA . 3,003 parts In-Stock

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Argo Parts USA

USA . 2,894 parts In-Stock

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Continental Prestige Electronics

USA . 2,099 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Upgrade your electronic designs with the BCX5610H6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality small signal bipolar junction transistors that offer exceptional performance and reliability. Whether you need to amplify signals or enhance your circuits, this NPN transistor is the perfect choice. Its compact package design and high power dissipation make it ideal for a wide range of applications. Trust Infineon to provide you with the best components for your projects. Elevate your creations with the BCX5610H6327XTSA1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easier to use in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Being surface mount compatible, this transistor can be easily mounted on circuit boards, saving space and allowing for automated assembly.

Package Shape: RECTANGULAR

The rectangular package shape offers versatility in placement and orientation on the circuit board.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation rating, this transistor can handle high power levels without overheating, ensuring reliability.

Minimum DC Current Gain (hFE): 63

The minimum DC current gain of 63 ensures consistent and stable amplification performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature rating of 150°C allows the transistor to function effectively in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 80 V

The maximum collector-emitter voltage of 80V ensures that the transistor can handle higher voltage levels without breakdown, enhancing the reliability of the circuit.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring good performance and longevity.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle higher current levels without saturation, making it suitable for various applications.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and solderability, ensuring secure connections in the circuit.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100MHz allows for fast switching and amplification, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX5610H6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX5610H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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