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BCX53-16,135

NXP Semiconductors

BCX53-16,135 by NXP Semiconductors

BCX53-16,135 by NXP is a PNP BJT transistor for switching applications. With max. power dissipation of 1W and max. collector current of 1A, it operates at up to 150°C. Its small outline package and high transition frequency of 145MHz make it suitable for various electronic designs.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Future Electronics

Canada . 212,000 parts In-Stock

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Rochester

USA . 124,000 parts In-Stock

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$0.062

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$0.051

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$0.046

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$0.062

$0.051

$0.046

Chip1Stop

Japan . 96,000 parts In-Stock

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$0.060

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$0.060

Arrow

USA . 84,000 parts In-Stock

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$0.045

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Verical

USA . 80,000 parts In-Stock

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EBV Elektronik

Germany . 8,000 parts In-Stock

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Digiode

USA . 123 parts In-Stock

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Nova Conductors

Japan . 48 parts In-Stock

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Chip Stock

USA . 182,000 parts In-Stock

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NAC Semi

USA . 168,000 parts In-Stock

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$0.064

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VNN

France . 11,864 parts In-Stock

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Vyrian

USA . 8,273 parts In-Stock

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Anansix

USA . 2,124 parts In-Stock

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Sensible Micro Corp

USA . 695 parts In-Stock

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ComSIT Distribution GmbH

Germany . 164 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 81,386 parts In-Stock

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$0.041

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Semicontronic

India . 71,451 parts In-Stock

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$0.041

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$0.040

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$0.040

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$0.041

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$0.040

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Corphita

USA . 3,378 parts In-Stock

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$0.046

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AZTECH Wire

Italy . 7,762 parts In-Stock

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$0.060

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Continental Prestige Electronics

USA . 5,515 parts In-Stock

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$0.114

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$0.112

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Argo Parts USA

USA . 4,260 parts In-Stock

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$0.114

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$0.111

4,260

$0.114

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$0.111

Netroflash

USA . 1,000 parts In-Stock

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$0.122

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$0.122

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.445

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$0.423

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$0.423

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100

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Aztec Data Supply Inc.

USA . 2,844 parts In-Stock

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$0.694

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Corohmni

South Africa . 391 parts In-Stock

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$1.279

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Eastek

USA . 764,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,004 parts In-Stock

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Glotronic Ltd.

UK . 9,600 parts In-Stock

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UNI Independent Distributors

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iodParts Technologies Inc.

India . 4,000 parts In-Stock

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GreenTree Electronics

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Authorized Procurement Solutions

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S.R.D Solutions

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Supply Digital

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Robosynatics

Brazil . 950 parts In-Stock

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Lucentia Tech

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Overview

Looking for a reliable solution for your switching applications? Look no further than the BCX53-16,135 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors guarantees top-notch quality and performance. This Small Signal Bipolar Junction Transistor offers a maximum collector-emitter voltage of 80V and a DC current gain of 100, making it ideal for a variety of applications. With a package style that is both compact and durable, this PNP transistor is perfect for your electronic projects. Trust NXP Semiconductors to deliver the quality and reliability you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

Being a PNP transistor allows for easy integration into circuits that require this specific polarity, making it a versatile choice.

Configuration: SINGLE

This single configuration simplifies circuit design and installation, making it easy to use for various projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient performance.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and secure mounting in circuit designs.

Terminal Form: FLAT

The flat terminal form ensures a secure connection and easy soldering during installation.

No. of Terminals: 3

With three terminals, this transistor can easily be connected in circuits for various applications.

Maximum Power Dissipation (Abs): 1 W

The high power dissipation capability of 1W ensures the transistor can handle high power loads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style is compact and space-saving, ideal for applications where size is a concern.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor provides consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to withstand demanding environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage of 80V provides versatility and allows for a wide range of operating voltages.

Transistor Element Material: SILICON

Silicon is a reliable and widely used material in transistors, ensuring high performance and durability.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle high current loads in circuits.

Terminal Finish: TIN

The tin terminal finish provides a reliable and durable connection for long-term use.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures correct orientation in circuits.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation, ensuring the transistor operates within safe temperature limits.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor can be easily integrated into automated assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards AEC-Q101 and IEC-60134, this transistor meets high quality and reliability requirements.

Nominal Transition Frequency (fT): 145 MHz

The high nominal transition frequency of 145MHz ensures fast switching speeds and high-frequency performance in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX53-16,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Reference Standard:

AEC-Q101; IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX53-16,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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