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BCX6825QTA

Diodes Incorporated

BCX6825QTA by Diodes Incorporated

BCX6825QTA by Diodes Inc. is a NPN BJT transistor with hFE of 60, VCE of 20V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 100MHz. It comes in a small outline package with matte tin finish for surface mount assembly.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 35 parts In-Stock

1+ parts

$0.900

100+ parts

$0.397

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$0.199

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35

$0.900

$0.397

$0.199

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Verical

USA . 21,000 parts In-Stock

1+ parts

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$0.145

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21,000

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$0.145

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Arrow

USA . 13,000 parts In-Stock

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$0.174

10k+ parts

$0.130

13,000

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$0.174

$0.130

Distributors (In-Stock)

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 11,930 parts In-Stock

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11,930

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VNN

France . 1,699 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Decca Corp

Germany . 5,370 parts In-Stock

1+ parts

$0.135

100+ parts

$0.132

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$0.131

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5,370

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$0.132

$0.131

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Corohmni

South Africa . 215 parts In-Stock

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$0.313

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215

$0.313

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Ampacity Inc.

Singapore . 5,267 parts In-Stock

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$0.318

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5,267

$0.318

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Aztec Data Supply Inc.

USA . 3,078 parts In-Stock

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$0.770

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3,078

$0.770

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,058 parts In-Stock

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Lixinc

USA . 8,766 parts In-Stock

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Continental Prestige Electronics

USA . 4,416 parts In-Stock

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Argo Parts USA

USA . 2,637 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Eastek

USA . 1,000 parts In-Stock

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$0.140

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1,000

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$0.140

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Overview

Upgrade your electronic designs with the BCX6825QTA from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like this NPN transistor designed for SWITCHING applications. Its compact SMALL OUTLINE package and high DC Current Gain ensure reliable performance in various electronic circuits. With a maximum Collector-Emitter Voltage of 20V and maximum Collector Current of 1A, this transistor is perfect for a wide range of projects. Trust Diodes Incorporated to bring you cutting-edge technology and unmatched value with the BCX6825QTA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching circuits, offering reliability and stability.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easy to use in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Surface mount feature enables easy installation and space-saving design, ideal for compact electronic devices.

Terminal Form: FLAT

Flat terminal form ensures secure connections and compatibility with various circuit designs.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enhance functionality.

Package Shape: RECTANGULAR

Rectangular package shape facilitates efficient PCB layout and thermal performance.

Minimum DC Current Gain (hFE): 60

High minimum DC current gain ensures stable and consistent transistor performance in amplification tasks.

Maximum Collector-Emitter Voltage: 20 V

High maximum collector-emitter voltage rating allows for a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material offers high efficiency, low noise, and temperature stability for reliable transistor operation.

Maximum Collector Current (IC): 1 A

High maximum collector current rating enables handling of higher current loads in various applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures consistent performance in circuit connections.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation for improved reliability and performance.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time allows for quick and efficient soldering process, reducing assembly time and costs.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability in various operating conditions.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliable performance in automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and reliable performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX6825QTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX6825QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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