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BCX68-25

Infineon Technologies

BCX68-25 by Infineon Technologies

BCX68-25 by Infineon Technologies is a NPN BJT transistor with 1W power dissipation, hFE of 160, and 20V collector-emitter voltage. It is used as an amplifier in applications requiring a small outline package style and flat terminal form for surface mount assembly.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Fibra_Brandt Electronic GMBH

Germany . 6,800 parts In-Stock

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Vyrian

USA . 1,159 parts In-Stock

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VNN

France . 714 parts In-Stock

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714

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Digiode

USA . 118 parts In-Stock

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118

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LIBRA Elektronik GmbH

Germany . 56 parts In-Stock

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56

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Corohmni

South Africa . 1,483 parts In-Stock

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$0.348

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1,483

$0.348

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Modulus Dynamics

Lithuania . 8,622 parts In-Stock

1+ parts

$0.486

100+ parts

$0.467

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$0.447

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8,622

$0.486

$0.467

$0.447

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Aztec Data Supply Inc.

USA . 2,373 parts In-Stock

1+ parts

$1.227

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2,373

$1.227

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AZTECH Wire

Italy . 425 parts In-Stock

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$9.426

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425

$9.426

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Ampacity Inc.

Singapore . 1,287 parts In-Stock

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$45.050

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1,287

$45.050

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,285 parts In-Stock

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Perfect Parts

USA . 19,040 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Microchip USA

USA . 4,019 parts In-Stock

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Argo Parts USA

USA . 2,758 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,100 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,400 parts In-Stock

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1,400

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Corphita

USA . 888 parts In-Stock

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888

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Assy Fe

Spain . 660 parts In-Stock

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Advanced Electronics

New Zealand . 639 parts In-Stock

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Continental Prestige Electronics

USA . 570 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Unleash the power of innovation with the BCX68-25 Small Signal Bipolar Junction Transistor by Infineon Technologies. This NPN transistor is a game-changer in the world of amplifiers, offering unparalleled performance and reliability. With a maximum power dissipation of 1W and a minimum DC current gain of 160, this transistor ensures optimal functionality in any application. Whether you're a hobbyist or a professional, Infineon's BCX68-25 is the perfect choice for your electronic projects, providing unmatched quality and value that sets it apart from the competition. Experience the difference today and see why Infineon Technologies is a leader in semiconductor manufacturing.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material choice provides durability and reliability, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient amplification and signal processing.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, reducing complexity.

Transistor Application: AMPLIFIER

Optimized for amplifier applications, ensuring high performance and quality sound output.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient packaging and space-saving in compact designs.

Terminal Form: FLAT

Flat terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Three terminals offer necessary connections for input, output, and biasing, ensuring proper functionality.

Maximum Power Dissipation (Abs): 1 W

High power dissipation rating allows for reliable operation under heavy loads.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compact size and low profile for space-constrained applications.

Minimum DC Current Gain (hFE): 160

High DC current gain ensures efficient amplification and low signal distortion.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance ensures reliability and stability in various environmental conditions.

Maximum Collector-Emitter Voltage: 20 V

High collector-emitter voltage rating offers versatility in different voltage requirements.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for long-term operation.

Maximum Collector Current (IC): 1 A

High collector current rating allows for handling of large current loads without overheating.

Terminal Finish: Tin (Sn)

Tin terminal finish ensures good electrical conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and prevents confusion during assembly.

Case Connection: COLLECTOR

Collector case connection ensures proper heat dissipation and efficient thermal management.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for rapid signal processing and high-frequency response.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX68-25 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX68-25 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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