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BCX6910H6327XTSA1

Infineon Technologies

BCX6910H6327XTSA1 by Infineon Technologies

BCX6910H6327XTSA1 by Infineon is a PNP BJT transistor with 20V VCE, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its high hFE of 85. It comes in a small outline package with flat terminals suitable for surface mount assembly.

Median Price

$0.289

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

$0.300

1k+ parts

$0.249

10k+ parts

$0.222

26,000

-

$0.300

$0.249

$0.222

Verical

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.278

26,000

-

-

-

$0.278

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.012

100+ parts

-

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100

$0.012

-

-

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Digiode

USA . 626 parts In-Stock

1+ parts

$0.234

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626

$0.234

-

-

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VNN

France . 28,235 parts In-Stock

1+ parts

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28,235

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Semi Source

USA . 27,025 parts In-Stock

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27,025

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Vyrian

USA . 7,711 parts In-Stock

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7,711

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.012

100+ parts

-

1k+ parts

$0.012

10k+ parts

-

1,000

$0.012

-

$0.012

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Continental Prestige Electronics

USA . 3,414 parts In-Stock

1+ parts

$0.012

100+ parts

-

1k+ parts

-

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$0.012

3,414

$0.012

-

-

$0.012

Argo Parts USA

USA . 1,343 parts In-Stock

1+ parts

$0.012

100+ parts

-

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-

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$0.012

1,343

$0.012

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-

$0.012

Modulus Dynamics

Lithuania . 9,304 parts In-Stock

1+ parts

$0.200

100+ parts

$0.192

1k+ parts

$0.184

10k+ parts

-

9,304

$0.200

$0.192

$0.184

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Corphita

USA . 17 parts In-Stock

1+ parts

$0.221

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-

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17

$0.221

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Ampacity Inc.

Singapore . 25,827 parts In-Stock

1+ parts

$0.455

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25,827

$0.455

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AZTECH Wire

Italy . 333 parts In-Stock

1+ parts

$18.010

100+ parts

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333

$18.010

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Overview

Get ready to amplify your projects with the BCX6910H6327XTSA1 by Infineon Technologies! As a leading manufacturer in the industry, Infineon delivers top-quality Small Signal Bipolar Junction Transistors that guarantee high performance and reliability. Ideal for amplifier applications, this PNP transistor offers a maximum collector-emitter voltage of 20V and a maximum collector current of 1A. With a minimum DC current gain of 85 and a nominal transition frequency of 100 MHz, this transistor is sure to enhance your electronic designs. Trust in Infineon for superior technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and durability for the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this transistor suitable for those applications.

Configuration: SINGLE

A single configuration simplifies circuit design and makes it easier to integrate into a system.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring good performance in amplification circuits.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient assembly on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape provides for efficient use of space on a circuit board.

Maximum Collector-Emitter Voltage: 20 V

A high collector-emitter voltage rating allows for use in various voltage circuits, increasing versatility.

Maximum Collector Current (IC): 1 A

Capability to handle high collector current ensures reliability and suitability for a wide range of applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables the transistor to operate effectively at high-frequency signals, making it suitable for broadband applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX6910H6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

85

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX6910H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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