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FMMT491QTC

Diodes Incorporated

FMMT491QTC by Diodes Incorporated

FMMT491QTC by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 30, and max power dissipation of 0.5W. Ideal for small outline applications requiring a collector-emitter voltage of 60V, operating at up to 150°C. AEC-Q101 certified for automotive use with a transition frequency of 150MHz.

Median Price

$0.113

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 1,890,000 parts In-Stock

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$0.113

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$0.113

Avnet

USA . 10,000 parts In-Stock

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NAC Semi

USA . 10,000 parts In-Stock

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TME

Poland . 10,000 parts In-Stock

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$0.158

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$0.158

Vyrian

USA . 8,813 parts In-Stock

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Nova Conductors

Japan . 83 parts In-Stock

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Semicontronic

India . 949,790 parts In-Stock

1+ parts

$0.096

100+ parts

$0.094

1k+ parts

$0.093

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949,790

$0.096

$0.094

$0.093

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Ampacity Inc.

Singapore . 414,506 parts In-Stock

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$0.096

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Corohmni

South Africa . 112 parts In-Stock

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$0.508

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$0.508

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Aztec Data Supply Inc.

USA . 4,134 parts In-Stock

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$1.780

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$1.780

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AZTECH Wire

Italy . 819 parts In-Stock

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$20.640

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819

$20.640

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Continental Prestige Electronics

USA . 5,087 parts In-Stock

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Argo Parts USA

USA . 3,134 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Upgrade your electronic designs with the FMMT491QTC by Diodes Incorporated! This high-quality Small Signal Bipolar Junction Transistor (BJT) offers superior performance and reliability, making it perfect for a wide range of applications. With its NPN polarity, single configuration, and gull wing terminal form, this transistor is easy to use and versatile. Whether you're working on automotive, industrial, or consumer electronics projects, the FMMT491QTC provides unmatched value, benefits, and advantages that will take your creations to the next level. Choose Diodes Incorporated for cutting-edge technology and exceptional quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor.

Polarity or Channel Type: NPN

Offers versatility for use in a variety of circuits and applications.

Configuration: SINGLE

Simplifies circuit design and integration.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Facilitates space-saving and organized PCB layout.

Maximum Power Dissipation (Abs): 0.5 W

Ensures reliable performance under specified conditions.

Minimum DC Current Gain (hFE): 30

Provides consistent and stable amplification.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 60 V

Handles moderate voltage requirements efficiently.

Transistor Element Material: SILICON

Known for its high efficiency and reliability in electronic components.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current loads.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and solderability.

Nominal Transition Frequency (fT): 150 MHz

Provides high-frequency performance for signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FMMT491QTC attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FMMT491QTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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