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FMMT619TA

Diodes Incorporated

FMMT619TA by Diodes Incorporated

FMMT619TA by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 2A, and min DC current gain of 100. With a package style of small outline and peak reflow temp of 260°C, it's ideal for high-speed switching circuits in automotive electronics.

Median Price

$0.318

Lifecycle Status

Suppliers In-Stock

52

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS Americas

USA . 367 parts In-Stock

1+ parts

$0.318

100+ parts

$0.270

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367

$0.318

$0.270

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DigiKey

USA . 16,075 parts In-Stock

1+ parts

$0.650

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$0.258

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$0.175

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16,075

$0.650

$0.258

$0.175

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Mouser Electronics

USA . 834 parts In-Stock

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$0.890

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$0.339

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$0.186

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834

$0.890

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Adafruit Industries

USA . 500 parts In-Stock

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$1.018

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$0.967

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$0.967

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$1.018

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$0.967

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Arrow

USA . 459,000 parts In-Stock

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Verical

USA . 459,000 parts In-Stock

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Future Electronics

Canada . 114,000 parts In-Stock

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Distributors (In-Stock)

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Freelance Electronics

USA . 8 parts In-Stock

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$0.098

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$0.098

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Maritex

Poland . 1,218 parts In-Stock

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$0.167

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$0.106

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$0.080

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$0.073

1,218

$0.167

$0.106

$0.080

$0.073

Nova Conductors

Japan . 600 parts In-Stock

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$0.273

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Bristol Electronics

USA . 9,000 parts In-Stock

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$0.450

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$0.225

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$0.090

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$0.056

9,000

$0.450

$0.225

$0.090

$0.056

TME

Poland . 3,151 parts In-Stock

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$0.530

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$0.243

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$0.162

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$0.132

3,151

$0.530

$0.243

$0.162

$0.132

Component Electronics Inc.

Canada . 5,595 parts In-Stock

1+ parts

$1.150

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$0.870

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$0.750

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5,595

$1.150

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IBS Electronics

USA . 2,190,000 parts In-Stock

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Vyrian

USA . 1,128,897 parts In-Stock

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Chip Stock

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NAC Semi

USA . 90,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 78,995 parts In-Stock

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Kruse Electronics AG

Switzerland . 6,000 parts In-Stock

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Dan-Mar Components

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Semi Source

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Sensible Micro Corp

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R&J Components

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ComSIT Distribution GmbH

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Mil-Aero Solutions, Inc.

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Component Sense

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ECAB

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Goldney Electronics S.L.

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Holdelec - ElecDif-Pro

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ABC Electronics Ltd.

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Ashlea Components Ltd

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LIBRA Elektronik GmbH

Germany . 1,795 parts In-Stock

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Micros

Poland . 1,770 parts In-Stock

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$0.160

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Partservice

France . 1,750 parts In-Stock

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$0.156

Micros sp.j. W. Kędra i J. Lic

Poland . 1,650 parts In-Stock

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Pegasus Components GmbH

Germany . 1,570 parts In-Stock

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Prism Electronics

USA . 1,409 parts In-Stock

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Atlantic Semiconductor

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Tectiva GmbH

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Martec Srl

Italy . 944 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Lantek

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Whistler Technology

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PC Components Company LLC

USA . 15 parts In-Stock

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NexGen Digital

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Semicontronic

India . 1,163,300 parts In-Stock

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$0.226

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$0.220

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$0.219

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$0.226

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Argo Parts USA

USA . 3,896 parts In-Stock

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$0.273

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$0.265

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$0.273

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Netroflash

USA . 2,000 parts In-Stock

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$0.273

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$0.259

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$0.254

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$0.273

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$0.254

Continental Prestige Electronics

USA . 1,878 parts In-Stock

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$0.273

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$0.268

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Corohmni

South Africa . 169 parts In-Stock

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$0.514

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169

$0.514

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.018

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$0.967

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$0.967

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500

$1.018

$0.967

$0.967

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Benley Electronics

USA . 4 parts In-Stock

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$1.750

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$1.750

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Modulus Dynamics

Lithuania . 10,767 parts In-Stock

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$1.756

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$1.756

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$1.756

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$1.756

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$1.756

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Aztec Data Supply Inc.

USA . 1,691 parts In-Stock

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$1.889

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Andel Nordic

Denmark . 739 parts In-Stock

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$2.011

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$1.930

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$1.930

739

$2.011

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$1.930

Perfect Parts

USA . 431,939 parts In-Stock

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Eastek

USA . 366,000 parts In-Stock

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Glotronic Ltd.

UK . 60,000 parts In-Stock

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iodParts Technologies Inc.

India . 21,625 parts In-Stock

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Infinite Electronics LLP (Excess)

. 19,189 parts In-Stock

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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S.R.D Solutions

India . 8,000 parts In-Stock

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Assy Fe

Spain . 6,627 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Lixinc

USA . 5,440 parts In-Stock

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GreenTree Electronics

Israel . 2,560 parts In-Stock

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$0.188

2,560

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Robosynatics

Brazil . 760 parts In-Stock

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$0.703

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$0.688

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$0.688

760

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$0.688

$0.688

Lucentia Tech

USA . 760 parts In-Stock

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$0.703

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$0.688

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760

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$0.688

Formix International (Excess)

India . 500 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 185 parts In-Stock

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Overview

Enhance your circuits with the FMMT619TA Small Signal Bipolar Junction Transistor by Diodes Incorporated. Known for their high-quality components, Diodes Incorporated brings you a versatile NPN transistor perfect for switching applications. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 100, this transistor offers reliability and efficiency. Whether you're a hobbyist or a professional, the FMMT619TA provides value, performance, and peace of mind. Upgrade your projects today with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE

Single configuration transistors simplify circuit design and make troubleshooting easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy integration into compact electronic designs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular package shape provides stability during mounting and allows for efficient placement on circuit boards.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and enable versatile use in different configurations.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, the transistor can handle a significant amount of power without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates efficient heat dissipation, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and consistent amplification in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a wide range of environments and conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, the transistor can handle higher voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and temperature stability in the transistor.

Maximum Collector Current (IC): 2 A

High maximum collector current capability allows for handling higher current levels in switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit board layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds maximum time at peak reflow temperature ensures efficient and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for quick and effective soldering of the transistor during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive electronics applications.

Nominal Transition Frequency (fT): 165 MHz

High nominal transition frequency indicates excellent high-frequency performance for signal amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FMMT619TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FMMT619TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-651-0910, 5961016510910, 5961-01-627-6546, 5961016276546

NIIN

016510910, 016276546

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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