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FMMT718

Diodes Incorporated

FMMT718 by Diodes Incorporated

FMMT718 by Diodes Inc. is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 20V, max collector current of 1.5A, and transition frequency of 180MHz. The package is surface mountable with Gull Wing terminals in a small outline style, suitable for high-temperature environments up to 150°C.

Median Price

$0.305

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 4,769 parts In-Stock

1+ parts

$0.571

100+ parts

$0.258

1k+ parts

$0.151

10k+ parts

-

4,769

$0.571

$0.258

$0.151

-

Farnell

UK . 19,633 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.198

10k+ parts

$0.195

19,633

-

$0.291

$0.198

$0.195

Element14

Singapore . 19,633 parts In-Stock

1+ parts

-

100+ parts

$0.319

1k+ parts

$0.218

10k+ parts

$0.214

19,633

-

$0.319

$0.218

$0.214

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.048

6,000

-

-

-

$0.048

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.222

100+ parts

-

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-

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-

300

$0.222

-

-

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Vyrian

USA . 18,288 parts In-Stock

1+ parts

-

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-

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18,288

-

-

-

-

Quantum Digital Technology

USA . 2,924 parts In-Stock

1+ parts

-

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2,924

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-

-

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J2 Sourcing AB

Sweden . 200 parts In-Stock

1+ parts

-

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200

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NPI Materials, Inc.

USA . 60 parts In-Stock

1+ parts

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60

-

-

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LittleDiode

UK . 4 parts In-Stock

1+ parts

-

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-

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 2,577 parts In-Stock

1+ parts

$0.222

100+ parts

-

1k+ parts

-

10k+ parts

$0.216

2,577

$0.222

-

-

$0.216

Semicontronic

India . 17,133 parts In-Stock

1+ parts

$0.247

100+ parts

$0.241

1k+ parts

$0.240

10k+ parts

-

17,133

$0.247

$0.241

$0.240

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.714

100+ parts

$0.678

1k+ parts

$0.678

10k+ parts

-

50

$0.714

$0.678

$0.678

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Aztec Data Supply Inc.

USA . 3,689 parts In-Stock

1+ parts

$1.690

100+ parts

-

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3,689

$1.690

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Corohmni

South Africa . 853 parts In-Stock

1+ parts

$1.941

100+ parts

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853

$1.941

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RC Electronics

USA . 71,000 parts In-Stock

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71,000

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Continental Prestige Electronics

USA . 13,545 parts In-Stock

1+ parts

-

100+ parts

$0.224

1k+ parts

$0.138

10k+ parts

$0.109

13,545

-

$0.224

$0.138

$0.109

S.R.D Solutions

India . 2,537 parts In-Stock

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2,537

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Assy Fe

Spain . 2,170 parts In-Stock

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2,170

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Kepictronics

USA . 1,900 parts In-Stock

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1,900

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Overview

Discover the FMMT718 by Diodes Incorporated, a top-tier manufacturer known for delivering high-quality Small Signal Bipolar Junction Transistors (BJTs) like no other. This PNP transistor is perfect for switching applications, offering customers unmatched reliability and performance. With a maximum collector-emitter voltage of 20V and a maximum collector current of 1.5A, this transistor ensures optimal functionality in any circuit. Say goodbye to worries about power dissipation with a maximum of 0.625W and enjoy the benefits of its small outline package shape for easy integration. Upgrade your electronics with the FMMT718 and experience the difference quality makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are needed for proper functionality.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

The transistor is specifically designed for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable, this transistor is suitable for automated assembly processes, saving time and effort.

No. of Terminals: 3

With 3 terminals, the transistor can be easily connected in circuits, providing flexibility in design.

Maximum Power Dissipation (Abs): 0.625 W

The high power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making it ideal for compact designs.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures stable and consistent amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate reliably even in elevated temperature environments.

Maximum Collector-Emitter Voltage: 20 V

With a maximum voltage rating of 20V, the transistor can withstand voltage spikes and variations in the circuit.

Maximum Collector Current (IC): 1.5 A

The high collector current rating of 1.5A enables the transistor to handle high current loads in the circuit.

Nominal Transition Frequency (fT): 180 MHz

The high transition frequency of 180MHz allows the transistor to switch quickly and efficiently in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FMMT718 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FMMT718 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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