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PMBT3906,215

NXP Semiconductors

PMBT3906,215 by NXP Semiconductors

The NXP Semiconductors PMBT3906,215 is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 30. With a small outline package style, it operates up to 150°C and features a peak reflow temperature of 260°C.

Median Price

$0.023

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

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Newark

USA . 20,288 parts In-Stock

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$0.193

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$0.070

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$0.044

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$0.044

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Adafruit Industries

USA . 60 parts In-Stock

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$1.422

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$1.294

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$1.166

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$1.422

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$1.166

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Rochester

USA . 9,147,990 parts In-Stock

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$0.022

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Verical

USA . 4,446,990 parts In-Stock

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DigiKey

USA . 2,624,544 parts In-Stock

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Future Electronics

Canada . 1,269,000 parts In-Stock

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TTI

USA . 273,000 parts In-Stock

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Chip1Stop

Japan . 141,000 parts In-Stock

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EBV Elektronik

Germany . 66,000 parts In-Stock

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Elektronika Sales Private Limited

India . 63,000 parts In-Stock

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Element14

Singapore . 60,000 parts In-Stock

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Arrow

USA . 12,000 parts In-Stock

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Farnell

UK . 5,944 parts In-Stock

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RS (Exports)

UK . 2,400 parts In-Stock

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2,400

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Distributors (In-Stock)

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Tomark Electronics Ltd

UK . 36,000 parts In-Stock

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$0.010

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Digiode

USA . 2,294 parts In-Stock

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Maritex

Poland . 290 parts In-Stock

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290

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Nova Conductors

Japan . 10 parts In-Stock

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TME

Poland . 4,856 parts In-Stock

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Component Electronics Inc.

Canada . 4,762 parts In-Stock

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IBS Electronics

USA . 4,365,000 parts In-Stock

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NAC Semi

USA . 3,426,000 parts In-Stock

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DigiKey Marketplace

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Component Sense

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PC Components Company LLC

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LIBRA Elektronik GmbH

Germany . 2,205 parts In-Stock

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Anansix

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Sensible Micro Corp

USA . 1,318 parts In-Stock

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Semi Source

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Prism Electronics

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Cogito LLC

Ukraine . 990 parts In-Stock

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Avant Electronics Limited

UK . 857 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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ComSIT Distribution GmbH

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Semicontronic

India . 6,793,612 parts In-Stock

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$0.007

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Ampacity Inc.

Singapore . 1,704,198 parts In-Stock

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Component Stockers USA

USA . 7,389,251 parts In-Stock

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Corphita

USA . 4,746 parts In-Stock

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AZTECH Wire

Italy . 8,201 parts In-Stock

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Argo Parts USA

USA . 2,293 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,431 parts In-Stock

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$1.058

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Advanced Electronics

New Zealand . 240 parts In-Stock

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$1.422

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$1.294

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$1.166

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Modulus Dynamics

Lithuania . 1,850 parts In-Stock

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$1.859

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$1.859

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$1.859

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1,850

$1.859

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Corohmni

South Africa . 2,857 parts In-Stock

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$1.935

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Perfect Parts

USA . 5,239,005 parts In-Stock

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

USA . 2,670,235 parts In-Stock

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iodParts Technologies Inc.

India . 154,399 parts In-Stock

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Resion (Excess)

USA . 147,000 parts In-Stock

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Kepictronics

USA . 85,652 parts In-Stock

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Glotronic Ltd.

UK . 40,800 parts In-Stock

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Israel . 26,976 parts In-Stock

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Robosynatics

Brazil . 24,187 parts In-Stock

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$0.557

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$0.545

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$0.545

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Lucentia Tech

USA . 24,187 parts In-Stock

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Futuretech Components

Singapore . 15,000 parts In-Stock

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Lixinc

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GreenTree Electronics

Israel . 2,975 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Supply Digital

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UNI Independent Distributors

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Authorized Procurement Solutions

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Formix International (Excess)

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Overview

Experience seamless switching capabilities with the PMBT3906,215 by NXP Semiconductors. This PNP Small Signal Bipolar Junction Transistor offers reliable performance in a compact package, making it ideal for various applications. Trust in NXP's reputation for quality and innovation as you benefit from this transistor's low VCEsat of 0.65V and high DC current gain of 30. Whether you're designing circuitry for consumer electronics or industrial automation, the PMBT3906,215 delivers unmatched value and efficiency. Upgrade your projects today with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, providing protection and easy handling for the transistor.

Polarity or Channel Type: PNP

PNP transistor configuration is suitable for switching applications.

Configuration: SINGLE

Single configuration makes it easy to use in various circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Ability to be surface mounted makes it suitable for modern PCB designs and compact electronic devices.

Maximum VCEsat: 0.65 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on a PCB.

Terminal Form: GULL WING

Gull wing terminals provide sturdy connections and easy soldering on the PCB.

Maximum Power Dissipation (Abs): 0.3 W

Able to handle a maximum power dissipation of 0.3W, ensuring reliable performance in various applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the PCB.

Minimum DC Current Gain (hFE): 30

Relatively high DC current gain ensures amplification of the input signal.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of up to 150°C allows for use in various environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance reduces the risk of signal distortion and improves high frequency performance.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring voltages up to 40V across the collector-emitter junction.

Transistor Element Material: SILICON

Silicon material ensures stability and reliability of the transistor element.

Maximum Turn On Time (ton): 65 ns

Fast turn on time of 65ns ensures quick response in switching applications.

Maximum Collector Current (IC): 0.2 A

Able to handle a maximum collector current of 0.2A, suitable for low power switching applications.

Maximum Turn Off Time (toff): 300 ns

Fairly low turn off time of 300ns ensures efficient switching performance.

Terminal Finish: TIN

Tin finish on the terminals provides good conductivity and solderability.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connection.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature of 30 seconds minimizes thermal stress on the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures reliable solder joints during assembly.

Nominal Transition Frequency (fT): 250 MHz

High nominal transition frequency of 250MHz allows for high-speed switching performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PMBT3906,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

65 ns

Maximum VCEsat:

.65 V

Trade Compliance

PMBT3906,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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