Loading...

PUMH9-QZ

Nexperia

PUMH9-QZ by Nexperia

Nexperia's PUMH9-QZ is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.1V, hFE of 100, and fT of 230MHz. With max ratings at 50V/0.1A, it operates from -55 to 150°C in small outline package for automotive (AEC-Q101) and general use (IEC-60134).

Median Price

$0.063

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 88 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

-

88

$0.063

-

-

-

Chip Stock

USA . 79,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

79,000

-

-

-

-

Vyrian

USA . 6,158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,158

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

$0.060

10k+ parts

$0.059

1,000

$0.063

-

$0.060

$0.059

Continental Prestige Electronics

USA . 824 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

$0.062

824

$0.063

-

-

$0.062

Argo Parts USA

USA . 533 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

533

$0.063

-

-

$0.061

Ampacity Inc.

Singapore . 1,446 parts In-Stock

1+ parts

$3.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,446

$3.050

-

-

-

AZTECH Wire

Italy . 9,281 parts In-Stock

1+ parts

$19.171

100+ parts

-

1k+ parts

-

10k+ parts

-

9,281

$19.171

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 28,378 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28,378

-

-

-

-

Supply Digital

USA . 1,331 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,331

-

-

-

-

Overview

Elevate your electronic designs with the Nexperia PUMH9-QZ Small Signal Bipolar Junction Transistor. Manufactured by Nexperia, known for their top-notch quality and reliability, this NPN transistor is perfect for switching applications. With a low VCEsat of 0.1V and a built-in resistor, this component offers superior performance and efficiency. Whether you're designing consumer electronics, automotive systems, or industrial equipment, the PUMH9-QZ delivers exceptional value and versatility. Trust Nexperia for cutting-edge technology that sets you apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design, saving space and reducing costs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Maximum VCEsat: 0.1 V

Low VCEsat ensures efficient operation with minimal power loss.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and mount in various applications.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections during surface mounting.

No. of Elements: 2

Having two elements allows for more complex circuit configurations and functionality.

No. of Terminals: 6

With 6 terminals, this transistor offers flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.3 W

The high power dissipation capability ensures reliability and longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on the PCB, making it suitable for compact designs.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures accurate and stable amplification in various circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance minimizes signal distortion and interference in high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating ensures the transistor can handle higher voltages safely.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various applications.

Minimum Operating Temperature: -55 °C

Can operate in extreme low temperatures without compromising functionality, suitable for harsh environments.

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector current, suitable for various switching and amplification applications.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and connection options.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures reliability, quality, and interoperability with other components.

Nominal Transition Frequency (fT): 230 MHz

The high transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMH9-QZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Nexperia 20

Similar products 20