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PUMH9-QX

Nexperia

PUMH9-QX by Nexperia

The Nexperia PUMH9-QX is a NPN BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It features a max VCEsat of 0.1V, hFE of 100, and can handle a max collector-emitter voltage of 50V. With a small outline package style and dual terminal position, it operates b/w -55 to 150°C.

Median Price

$0.210

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,105 parts In-Stock

1+ parts

$0.210

100+ parts

$0.079

1k+ parts

$0.051

10k+ parts

$0.031

9,105

$0.210

$0.079

$0.051

$0.031

DigiKey

USA . 2,610 parts In-Stock

1+ parts

$0.210

100+ parts

$0.079

1k+ parts

$0.051

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$0.035

2,610

$0.210

$0.079

$0.051

$0.035

Future Electronics

Canada . 396,000 parts In-Stock

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$0.019

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$0.019

Verical

USA . 150,000 parts In-Stock

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150,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 900 parts In-Stock

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$0.063

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900

$0.063

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TME

Poland . 2,844 parts In-Stock

1+ parts

$0.080

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$0.047

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$0.037

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$0.034

2,844

$0.080

$0.047

$0.037

$0.034

NAC Semi

USA . 588,000 parts In-Stock

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$0.036

588,000

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$0.036

Sensible Micro Corp

USA . 562,388 parts In-Stock

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Chip Stock

USA . 121,000 parts In-Stock

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Vyrian

USA . 8,635 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 13,824 parts In-Stock

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$0.020

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$0.020

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.063

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$0.060

1k+ parts

$0.057

10k+ parts

$0.056

300

$0.063

$0.060

$0.057

$0.056

Continental Prestige Electronics

USA . 6,374 parts In-Stock

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$0.063

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$0.062

6,374

$0.063

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$0.062

Argo Parts USA

USA . 2,719 parts In-Stock

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$0.063

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$0.061

2,719

$0.063

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$0.061

Corohmni

South Africa . 21 parts In-Stock

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$0.701

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$0.701

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Aztec Data Supply Inc.

USA . 4,946 parts In-Stock

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$1.070

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$1.070

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Ampacity Inc.

Singapore . 23,516 parts In-Stock

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$36.050

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23,516

$36.050

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Supply Digital

USA . 92 parts In-Stock

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Overview

Discover the power of the Nexperia PUMH9-QX Small Signal Bipolar Junction Transistor - an essential component for your switching applications. With a maximum VCEsat of only 0.1V and a minimum DC current gain of 100, this NPN transistor offers unmatched efficiency and performance. Designed with built-in resistors and a compact gull wing package, this transistor is perfect for space-constrained designs. Trust Nexperia's reputation for quality and reliability, backed by industry standards AEC-Q101 and IEC-60134. Upgrade your projects with the PUMH9-QX and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile and suitable for a wide range of electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having two separate elements with built-in resistors allows for easier circuit design and integration, saving time and effort in complex electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and high efficiency, making it ideal for use in power control circuits.

Surface Mount: YES

Being surface mountable makes the transistor easier to install and saves space on the circuit board, making it suitable for compact electronic devices.

Maximum VCEsat: 0.1 V

With a low VCEsat value, this transistor minimizes power loss and heat dissipation, resulting in improved efficiency and performance in switching applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy handling and assembly in electronic circuits, making it convenient for integration into various devices.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering connections and helps to prevent mechanical stress on the transistor, ensuring reliable performance in use.

No. of Elements: 2

Having two elements allows for increased functionality and versatility in circuit design, offering more options for customization and optimization.

No. of Terminals: 6

With six terminals, this transistor provides multiple connection points for increased flexibility in circuit layout and integration, accommodating various design requirements.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating, ensuring reliable operation over extended periods.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for use in compact electronic devices where size is a critical factor.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor provides consistent and stable amplification, ensuring accurate signal processing in electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range of 150°C allows the transistor to operate reliably in a wide range of environmental conditions, providing durability and stability.

Maximum Collector-Base Capacitance: 2.5 pF

With low collector-base capacitance, this transistor minimizes signal distortion and ensures high-frequency performance, making it suitable for fast-switching applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50 V allows for safe operation in high voltage circuits, making this transistor versatile and capable of handling various voltage levels.

Transistor Element Material: SILICON

Silicon-based transistor elements offer high performance, reliability, and durability, making this transistor a dependable choice for a wide range of electronic applications.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this transistor can withstand cold temperatures and operate reliably in harsh environmental conditions.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1 A, this transistor is suitable for low to moderate power applications, offering versatility in various electronic circuits.

Terminal Position: DUAL

Having dual terminal positions allows for easy connection and integration into electronic circuits, offering flexibility in circuit design and layout.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability, making this transistor a trusted choice for automotive and general electronic applications.

Nominal Transition Frequency (fT): 230 MHz

With a high nominal transition frequency of 230 MHz, this transistor offers fast switching speeds and high-frequency performance, making it suitable for demanding electronic applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMH9-QX attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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