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PUMH2,115

NXP Semiconductors

PUMH2,115 by NXP Semiconductors

PUMH2,115 by NXP Semiconductors is a NPN BJT with 2 elements and built-in resistor. It's used for switching applications, has a max collector-emitter voltage of 50V, and can handle a max collector current of 0.1A. This small outline transistor operates up to 150°C and comes in a rectangular package with gull wing terminals.

Median Price

$0.051

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Chip1Stop

Japan . 128 parts In-Stock

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$0.027

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$0.018

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128

$0.027

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Mouser Electronics

USA . 41,900 parts In-Stock

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$0.300

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$0.107

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$0.067

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$0.039

41,900

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$0.039

Newark

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$0.333

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$0.128

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Future Electronics

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Rochester

USA . 114,789 parts In-Stock

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$0.053

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$0.044

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$0.039

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DigiKey

USA . 114,789 parts In-Stock

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$0.070

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Verical

USA . 114,789 parts In-Stock

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$0.049

114,789

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EBV Elektronik

Germany . 45,000 parts In-Stock

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Element14

Singapore . 30,000 parts In-Stock

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Arrow

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Farnell

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Nova Conductors

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650

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TME

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$0.042

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223

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DigiKey Marketplace

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Chip Stock

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IBS Electronics

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NAC Semi

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$0.230

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LIBRA Elektronik GmbH

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Vyrian

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Semi Source

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Anansix

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Semicontronic

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Ampacity Inc.

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Corphita

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AZTECH Wire

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Argo Parts USA

USA . 561 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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Aztec Data Supply Inc.

USA . 116 parts In-Stock

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Modulus Dynamics

Lithuania . 13,517 parts In-Stock

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Perfect Parts

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Eastek

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Continental Prestige Electronics

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GreenTree Electronics

Israel . 24,000 parts In-Stock

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Glotronic Ltd.

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South Africa . 1,664 parts In-Stock

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Supply Digital

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Netroflash

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Robosynatics

Brazil . 404 parts In-Stock

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Lucentia Tech

USA . 404 parts In-Stock

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UNI Independent Distributors

Spain . 104 parts In-Stock

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Overview

Discover the power of innovation with the PUMH2,115 by NXP Semiconductors. This Small Signal Bipolar Junction Transistor (BJT) offers superior quality and performance, making it ideal for a wide range of switching applications. With its compact design and high reliability, this transistor provides unmatched value and benefits to customers looking for efficiency and precision in their electronic devices. Trust NXP Semiconductors to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the PUMH2,115.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type:

NPN - The NPN configuration allows for high switching speeds, making this transistor suitable for switching applications.

Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - The built-in resistor simplifies circuit design and saves space, making this transistor convenient for compact devices.

Transistor Application:

SWITCHING - Designed specifically for switching applications, this transistor offers efficient performance in controlling electrical signals.

Surface Mount:

YES - The surface mount feature enables easy installation on PCBs, making this transistor a convenient choice for electronics manufacturing.

Package Shape:

RECTANGULAR - The rectangular shape of the package allows for efficient placement on circuit boards, optimizing space utilization.

Terminal Form:

GULL WING - The gull wing terminal form provides secure soldering connections, ensuring reliability in circuitry.

No. of Elements:

2 - With two elements, this transistor offers versatility in circuit design, allowing for a variety of configurations.

No. of Terminals:

6 - The six terminals provide multiple connection points, enhancing flexibility in circuit integration and functionality.

Maximum Power Dissipation (Abs):

0.2 W - With a maximum power dissipation of 0.2W, this transistor can handle moderate power loads, suitable for many applications.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and allows for compact designs, making this transistor ideal for size-constrained applications.

Minimum DC Current Gain (hFE):

80 - The high minimum DC current gain ensures reliable amplification and switching capabilities, making this transistor versatile for various applications.

Maximum Operating Temperature:

150 °C - With a maximum operating temperature of 150°C, this transistor can withstand high heat environments, ensuring stable performance in challenging conditions.

Maximum Collector-Emitter Voltage:

50 V - The high maximum collector-emitter voltage rating provides robust protection against electrical overloads, making this transistor durable and reliable.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material ensures high performance and reliability in signal amplification and switching applications.

Maximum Collector Current (IC):

0.1 A - Capable of handling a maximum collector current of 0.1A, this transistor is suitable for low to moderate current applications.

Terminal Finish:

TIN - The tin terminal finish provides excellent conductivity and solderability, ensuring dependable electrical connections for enhanced performance.

Terminal Position:

DUAL - The dual terminal position offers flexibility in circuit layout and connection options, accommodating various design requirements.

Maximum Time At Peak Reflow Temperature (s):

30 - With a maximum time of 30 seconds at peak reflow temperature, this transistor is easy to integrate into manufacturing processes, increasing efficiency.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature of 260°C ensures reliable soldering and durability, making this transistor ideal for harsh operating conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMH2,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PUMH2,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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