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PUMH20,115

NXP Semiconductors

PUMH20,115 by NXP Semiconductors

PUMH20,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and built-in resistor. It is used for switching applications, has a max collector-emitter voltage of 50V, and can handle a max collector current of 0.1A. Ideal for surface mount designs with small outline package style.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 75 parts In-Stock

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$0.040

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$0.040

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$0.040

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75

$0.040

$0.040

$0.040

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Newark

USA . 1 parts In-Stock

1+ parts

$0.333

100+ parts

$0.128

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-

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1

$0.333

$0.128

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EBV Elektronik

Germany . 258,000 parts In-Stock

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258,000

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Arrow

USA . 111,000 parts In-Stock

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$0.033

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$0.033

Verical

USA . 111,000 parts In-Stock

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$0.033

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$0.033

Avnet

USA . 78,000 parts In-Stock

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Chip1Stop

Japan . 33,000 parts In-Stock

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$0.023

33,000

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$0.023

Farnell

UK . 3,046 parts In-Stock

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$0.063

10k+ parts

$0.055

3,046

-

-

$0.063

$0.055

Future Electronics

Canada . 3,000 parts In-Stock

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$0.019

3,000

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$0.019

Element14

Singapore . 1 parts In-Stock

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$0.140

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$0.103

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$0.090

1

-

$0.140

$0.103

$0.090

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.059

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500

$0.059

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Digiode

USA . 4,711 parts In-Stock

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$0.152

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Chip Stock

USA . 152,000 parts In-Stock

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NAC Semi

USA . 150,000 parts In-Stock

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$0.033

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$0.033

Bristol Electronics

USA . 141,000 parts In-Stock

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IBS Electronics

USA . 39,000 parts In-Stock

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$0.023

39,000

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$0.023

Sensible Micro Corp

USA . 12,000 parts In-Stock

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12,000

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Micros sp.j. W. Kędra i J. Lic

Poland . 12,000 parts In-Stock

1+ parts

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$0.166

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$0.030

12,000

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$0.166

$0.030

Vyrian

USA . 6,500 parts In-Stock

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6,500

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Micros

Poland . 3,000 parts In-Stock

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$0.045

3,000

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$0.045

Partservice

France . 3,000 parts In-Stock

1+ parts

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$0.090

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$0.034

3,000

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$0.090

$0.034

Anansix

USA . 2,475 parts In-Stock

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2,475

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Elcom Components

USA . 800 parts In-Stock

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800

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Distributors (Availability)

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Ampacity Inc.

Singapore . 52,116 parts In-Stock

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$0.031

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52,116

$0.031

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Semicontronic

India . 46,254 parts In-Stock

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$0.031

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Argo Parts USA

USA . 3,777 parts In-Stock

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$0.059

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$0.057

3,777

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$0.057

Netroflash

USA . 100 parts In-Stock

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$0.059

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$0.058

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AZTECH Wire

Italy . 6,216 parts In-Stock

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Corphita

USA . 1,371 parts In-Stock

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$0.144

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Component Stockers USA

USA . 405,093 parts In-Stock

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$0.240

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$0.080

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$0.050

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$0.020

405,093

$0.240

$0.080

$0.050

$0.020

Continental Prestige Electronics

USA . 7,083 parts In-Stock

1+ parts

$0.299

100+ parts

$0.117

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$0.050

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$0.035

7,083

$0.299

$0.117

$0.050

$0.035

Corohmni

South Africa . 43 parts In-Stock

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$1.705

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43

$1.705

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Aztec Data Supply Inc.

USA . 3,084 parts In-Stock

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$1.890

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$1.890

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Eastek

USA . 111,000 parts In-Stock

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Perfect Parts

USA . 19,811 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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UNI Independent Distributors

Spain . 6,400 parts In-Stock

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Supply Digital

USA . 983 parts In-Stock

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983

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Overview

Discover the perfect solution for your switching needs with the PUMH20,115 by NXP Semiconductors. Designed with precision and quality in mind, this NPN BJT transistor offers reliability and performance like no other. Whether you're looking to enhance your electronics projects or streamline your industrial applications, this transistor's separate elements with built-in resistor configuration provide unparalleled value. Say goodbye to inefficiency and hello to seamless operation with the PUMH20,115 – the ultimate choice for all your switching requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, offering versatility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration allows for easy integration into circuits and reduces the need for additional components, simplifying the overall design.

Transistor Application: SWITCHING

Ideal for applications that require rapid switching between on and off states, offering high performance in switching circuits.

Surface Mount: YES

Surface mount compatibility enables easy and efficient PCB assembly, saving space and reducing production costs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on the PCB, optimizing space utilization.

Terminal Form: GULL WING

The gull wing terminal form provides reliable electrical connections and mechanical strength, ensuring secure mounting on the PCB.

No. of Elements: 2

With two elements, this transistor offers increased functionality and flexibility in circuit design.

No. of Terminals: 6

Six terminals provide ample connection points for different circuit configurations, enhancing versatility in application.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation, this transistor operates efficiently and minimizes heat generation, prolonging its lifespan.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 30

The minimum current gain ensures reliable amplification of input signals, maintaining signal integrity in the circuit.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand demanding operating conditions without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

The maximum voltage rating ensures safe operation within specified limits, preventing damage to the transistor.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor a durable and long-lasting choice.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating allows for safe operation at specified current levels, ensuring stability in circuit performance.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and reliable solder connections, enhancing the durability of the transistor.

Terminal Position: DUAL

Dual terminal position allows for easy integration into various circuit layouts, offering flexibility in PCB design.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering and assembly, preventing damage to the transistor during production.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without degradation, ensuring reliability in manufacturing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMH20,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PUMH20,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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