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PUMH1,115

NXP Semiconductors

PUMH1,115 by NXP Semiconductors

PUMH1,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and built-in resistor for switching applications. It has a max VCEsat of 0.3V, min hFE of 60, and can handle a max collector-emitter voltage of 50V. This small outline transistor operates up to 150°C and dissipates up to 0.4W power in ambient conditions.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

23

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1k+

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Newark

USA . 4,238 parts In-Stock

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$0.028

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Mouser Electronics

USA . 37,900 parts In-Stock

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$0.200

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$0.075

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$0.055

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$0.039

37,900

$0.200

$0.075

$0.055

$0.039

DigiKey

USA . 4 parts In-Stock

1+ parts

$0.200

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$0.075

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$0.048

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$0.032

4

$0.200

$0.075

$0.048

$0.032

TTI

USA . 213,000 parts In-Stock

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EBV Elektronik

Germany . 42,000 parts In-Stock

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Rochester

USA . 36,210 parts In-Stock

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$0.053

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$0.044

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$0.039

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$0.044

$0.039

Arrow

USA . 12,250 parts In-Stock

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Verical

USA . 12,250 parts In-Stock

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Farnell

UK . 5,826 parts In-Stock

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Element14

Singapore . 3,265 parts In-Stock

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$0.104

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$0.094

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$0.094

Chip1Stop

Japan . 1,180 parts In-Stock

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Digiode

USA . 3,568 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$0.059

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TME

Poland . 19,318 parts In-Stock

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$0.130

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$0.055

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$0.035

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$0.032

19,318

$0.130

$0.055

$0.035

$0.032

Bristol Electronics

USA . 2,055 parts In-Stock

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$0.150

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$0.075

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$0.030

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2,055

$0.150

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NAC Semi

USA . 450,000 parts In-Stock

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IBS Electronics

USA . 432,000 parts In-Stock

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Chip Stock

USA . 156,000 parts In-Stock

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Flip Electronics

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Vyrian

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Inventory MP

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Anansix

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A2Z Electronics, Inc.

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Semicontronic

India . 122,555 parts In-Stock

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Corphita

USA . 2,499 parts In-Stock

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Component Stockers USA

USA . 794,182 parts In-Stock

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AZTECH Wire

Italy . 9,022 parts In-Stock

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Ampacity Inc.

Singapore . 123,281 parts In-Stock

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Argo Parts USA

USA . 832 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.056

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Advanced Electronics

New Zealand . 140 parts In-Stock

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$0.561

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$0.511

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$0.460

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$0.561

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Modulus Dynamics

Lithuania . 1,439 parts In-Stock

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$1.815

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$1.815

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$1.815

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Aztec Data Supply Inc.

USA . 4,230 parts In-Stock

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$1.840

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Corohmni

South Africa . 250 parts In-Stock

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Eastek

USA . 909,000 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 18,000 parts In-Stock

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Glotronic Ltd.

UK . 14,400 parts In-Stock

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Lixinc

USA . 12,992 parts In-Stock

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Continental Prestige Electronics

USA . 7,501 parts In-Stock

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UNI Independent Distributors

Spain . 6,033 parts In-Stock

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Supply Digital

USA . 134 parts In-Stock

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Overview

Discover the power of innovation with the PUMH1,115 by NXP Semiconductors. This Small Signal Bipolar Junction Transistor boasts top-quality construction and cutting-edge technology, making it ideal for a wide range of switching applications. With its compact design and maximum VCEsat of just 0.3V, this NPN transistor offers unmatched efficiency and performance. Trust in NXP Semiconductors to deliver reliable, high-quality components that will take your projects to the next level. Experience the difference with the PUMH1,115 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for efficient switching capabilities and simplifies circuit design by integrating resistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient mounting on PCBs, saving space and simplifying assembly.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates minimal power loss and efficient operation of the transistor.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB, optimizing PCB layout.

Terminal Form: GULL WING

Gull wing terminals provide strong and reliable connections, ensuring stability in circuit operation.

No. of Elements: 2

Two elements allow for more complex circuit configurations and increased functionality.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation value, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, suitable for compact electronic devices.

Maximum Power Dissipation Ambient: 0.4 W

Can withstand higher power dissipation levels in ambient conditions, offering reliability in different environments.

Minimum DC Current Gain (hFE): 60

A higher minimum DC current gain ensures stable and consistent amplification in various operating conditions.

Maximum Operating Temperature: 150 °C

Operates effectively at high temperatures, suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

Can handle up to 50 volts, providing flexibility in voltage requirements for different applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in semiconductor technology.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 amps of current, suitable for low to moderate current applications.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and conductivity, facilitating easy assembly and connection.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB mounting orientation, accommodating various circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Allows for high-temperature reflow soldering, suitable for lead-free assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMH1,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.3 V

Trade Compliance

PUMH1,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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