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PUMH2-QF

Nexperia

PUMH2-QF by Nexperia

PUMH2-QF by Nexperia is a NPN BJT with 2 elements, built-in resistor, and 0.15V VCEsat. Ideal for switching applications, it has a max IC of 0.1A, hFE of 80, and operates b/w -65 to 150°C. With a package style of small outline and Gull Wing terminals, it offers high performance in a compact design.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 63,000 parts In-Stock

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Vyrian

USA . 8,932 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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Corohmni

South Africa . 755 parts In-Stock

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$0.588

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Aztec Data Supply Inc.

USA . 4,974 parts In-Stock

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$0.860

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AZTECH Wire

Italy . 7,927 parts In-Stock

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Ampacity Inc.

Singapore . 1,248 parts In-Stock

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$55.050

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Semicontronic

India . 658 parts In-Stock

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$59.050

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$57.574

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$57.278

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,323 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 71 parts In-Stock

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Overview

Discover the reliability and efficiency of the Nexperia PUMH2-QF Small Signal Bipolar Junction Transistor. Designed for switching applications, this NPN transistor offers a maximum VCEsat of 0.15V and a minimum DC current gain of 80. With a compact package shape and gull wing terminal form, this transistor is ideal for space-constrained designs. Trust in Nexperia's reputation for quality and innovation to deliver a high-performance solution that meets your needs. Upgrade your electronic projects with the PUMH2-QF and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a long lifespan for the product.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications, making it versatile for different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuits, reducing the need for external components.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, making it suitable for various electronic devices.

Surface Mount: YES

Simplifies PCB assembly process and saves space, making it ideal for compact designs.

Maximum VCEsat: 0.15 V

Low saturation voltage minimizes power loss and heat generation in the transistor during operation.

Package Shape: RECTANGULAR

Easily fits on standard PCB layouts, simplifying the design process.

No. of Elements: 2

Provides flexibility in circuit design and enables more complex functions to be performed.

No. of Terminals: 6

Offers multiple connection points for interfacing with other components, enhancing versatility.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the PCB, allowing for denser layouts and smaller electronic devices.

Minimum DC Current Gain (hFE): 80

Ensures consistent and stable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for harsh environments.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance reduces signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 50 V

Handles moderate voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Provides high reliability and performance consistency over a wide temperature range.

Minimum Operating Temperature: -65 °C

Can function in extreme cold temperatures, making it suitable for a variety of operating environments.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, making it suitable for small signal applications.

Terminal Position: DUAL

Provides flexibility in mounting and connections, making installation easier.

Reference Standard: AEC-Q101; IEC-60134

Complies with industry standards for quality and reliability, ensuring consistent performance.

Nominal Transition Frequency (fT): 230 MHz

Capable of high-frequency operation, suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMH2-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.15 V

Trade Compliance

PUMH2-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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