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BC847BPN-QZ

Nexperia

BC847BPN-QZ by Nexperia

BC847BPN-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels. It has 2 separate elements, Gull Wing terminals, and operates at -65 to 150°C. Ideal for switching applications, it offers VCEsat of 0.3V, hFE of 200, and fT of 100MHz in a small outline package.

Median Price

$0.057

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 71 parts In-Stock

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Chip Stock

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Vyrian

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Aranea Global

USA . 1,000 parts In-Stock

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$0.054

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Argo Parts USA

USA . 4,784 parts In-Stock

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Continental Prestige Electronics

USA . 3,086 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$0.444

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$0.422

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$0.422

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Aztec Data Supply Inc.

USA . 3,996 parts In-Stock

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$0.750

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Corohmni

South Africa . 1,143 parts In-Stock

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Ampacity Inc.

Singapore . 19,684 parts In-Stock

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AZTECH Wire

Italy . 5,731 parts In-Stock

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Semicontronic

India . 19,670 parts In-Stock

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GreenTree Electronics

Israel . 120,000 parts In-Stock

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Eastek

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Authorized Procurement Solutions

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Supply Digital

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Overview

Experience the superior quality and reliability of Nexperia with the BC847BPN-QZ small signal bipolar junction transistor. This versatile component, featuring separate NPN and PNP elements for switching applications, offers customers unmatched performance and value. With a maximum VCEsat of 0.3V and a nominal transition frequency of 100 MHz, this transistor is ideal for a wide range of electronic projects. Trust Nexperia for cutting-edge technology and innovative solutions that exceed expectations. Elevate your designs with the BC847BPN-QZ today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal conductivity and insulation, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for flexibility in circuit design and compatibility with different requirements.

Configuration: SEPARATE, 2 ELEMENTS

Separate elements allow for independent control and operation of each transistor, enhancing overall circuit performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and reliable switching performance.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.4 W

With a high power dissipation limit, this transistor can handle moderate power levels without overheating.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast signal amplification and response, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BPN-QZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.2 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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