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BC846S-QH

Nexperia

BC846S-QH by Nexperia

BC846S-QH by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.3V, min hFE of 110, and max IC of 0.1A. With a package style of small outline and dual terminal position, it operates b/w -65 to 150°C and has a fT of 100MHz.

Median Price

$0.061

Lifecycle Status

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4

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1k+

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Nova Conductors

Japan . 61 parts In-Stock

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Vyrian

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Semicontronic

India . 115,352 parts In-Stock

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AZTECH Wire

Italy . 3,058 parts In-Stock

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Argo Parts USA

USA . 3,761 parts In-Stock

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Continental Prestige Electronics

USA . 795 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Corohmni

South Africa . 32 parts In-Stock

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$1.258

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Aztec Data Supply Inc.

USA . 1,580 parts In-Stock

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Ampacity Inc.

Singapore . 221,970 parts In-Stock

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Eastek

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GreenTree Electronics

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Overview

Discover the BC846S-QH by Nexperia, a top-quality small signal bipolar junction transistor that offers exceptional performance and reliability. Manufactured by Nexperia, a renowned leader in semiconductor technology, this NPN transistor is ideal for switching applications. With a maximum VCEsat of 0.3V and a minimum DC current gain of 110, this transistor provides excellent efficiency and power dissipation. Its compact rectangular package with gull wing terminals makes it easy to mount and use in a variety of electronic devices. Trust Nexperia's BC846S-QH for superior performance and unmatched value in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits and amplification, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum VCEsat: 0.3 V

Low VCEsat helps in reducing power consumption and heat dissipation, making it energy efficient.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving PCB layout.

Terminal Form: GULL WING

Gull wing terminals provide secure electrical connections and ease of soldering during assembly.

No. of Terminals: 6

Having 6 terminals allows for flexibility in circuit design and connections.

Maximum Power Dissipation (Abs): 0.3 W

With a low power dissipation, the transistor can operate efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables high-density designs.

Minimum DC Current Gain (hFE): 110

High DC current gain ensures good amplification and signal switching performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Base Capacitance: 1.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 65 V

With a high collector-emitter voltage rating, the transistor can handle higher voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high reliability and performance stability over time.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for operation in extreme cold environments.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many switching applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and placement.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the product.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speed and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC846S-QH attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BC846S-QH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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