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BC846S-QF

Nexperia

BC846S-QF by Nexperia

BC846S-QF by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 110, and fT of 100MHz. With max ratings of 65V VCEO and 0.1A IC, it operates b/w -65 to 150°C.

Median Price

$0.057

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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EBV Elektronik

Germany . 70,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

USA . 94,000 parts In-Stock

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Elcom Components

USA . 10,000 parts In-Stock

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Vyrian

USA . 5,185 parts In-Stock

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VNN

France . 2,065 parts In-Stock

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Ampacity Inc.

Singapore . 9,741 parts In-Stock

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Argo Parts USA

USA . 2,180 parts In-Stock

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Continental Prestige Electronics

USA . 459 parts In-Stock

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Corohmni

South Africa . 533 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,542 parts In-Stock

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AZTECH Wire

Italy . 7,137 parts In-Stock

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Semicontronic

India . 9,761 parts In-Stock

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$56.599

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$56.308

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Supply Digital

USA . 2,138 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.056

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the BC846S-QF by Nexperia. Known for their exceptional quality and reliability, Nexperia delivers top-of-the-line Small Signal Bipolar Junction Transistors that are perfect for switching applications. This NPN transistor offers a low VCEsat of 0.3V, ensuring efficient performance while operating at temperatures up to 150°C. With a minimum DC current gain of 110 and a maximum collector current of 0.1A, this transistor is a versatile choice for a wide range of projects. Trust Nexperia to provide you with the high-quality components you need to bring your creations to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protects the transistor from external elements, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for current to flow from the collector to the emitter, making it suitable for use in a wide range of switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to incorporate this transistor into different electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, offering efficient performance in various electronic circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on circuit boards, saving space and simplifying the manufacturing process.

Maximum VCEsat: 0.3 V

The low maximum VCEsat of 0.3V ensures minimal voltage drop across the transistor, leading to improved efficiency in the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package offers easy handling and integration into electronic circuits, making it a practical choice for various applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering, ensuring reliable performance in different operating conditions.

No. of Terminals: 6

With 6 terminals, this transistor offers flexibility in circuit design and connections, allowing for versatile usage in various electronic devices.

Maximum Power Dissipation (Abs): 0.3 W

The maximum power dissipation of 0.3W ensures the transistor can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices where size is a concern.

Minimum DC Current Gain (hFE): 110

The high minimum DC current gain of 110 ensures amplification of input signals, making this transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, making it suitable for a wide range of applications.

Maximum Collector-Base Capacitance: 1.5 pF

The low maximum collector-base capacitance of 1.5pF reduces the risk of parasitic capacitance effects, ensuring stable performance in high-frequency circuits.

Maximum Collector-Emitter Voltage: 65 V

The high maximum collector-emitter voltage of 65V allows for the handling of higher voltage levels, making this transistor suitable for various voltage requirements.

Transistor Element Material: SILICON

The silicon transistor element material provides reliable performance and long-term stability, making it a durable choice for different electronic applications.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65°C, this transistor can function in cold environments, offering versatility in various operating conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for the handling of high current loads, making this transistor suitable for power applications.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and connections, allowing for easy integration into various electronic devices.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards AEC-Q101 and IEC-60134, this transistor meets quality and performance requirements for reliable operation in different applications.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100MHz, this transistor can operate at high frequencies, making it suitable for high-speed switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC846S-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.5 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

BC846S-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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