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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCP55-16F by Nexperia

BCP55-16F

Nexperia

Nexperia's BCP55-16F is a NPN BJT transistor with 100 min hFE, 60V VCE, and 1A IC. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 180MHz fT. Features GULL WING terminals in a small outline package.

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

180 MHz

BCP68-25/ZLF by Nexperia

BCP68-25/ZLF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Maximum Time At Peak Reflow Temperature (s): 30;

COLLECTOR

2 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

BCP68-25/ZLX by Nexperia

BCP68-25/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Moisture Sensitivity Level (MSL): 1;

COLLECTOR

2 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

BCP68/ZLF by Nexperia

BCP68/ZLF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BCP68/ZLX by Nexperia

BCP68/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 4;

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BCP68F by Nexperia

BCP68F

Nexperia

Nexperia's BCP68F is a NPN BJT transistor with hFE of 50, VCE of 20V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 170MHz. Features GULL WING terminals in a SMALL OUTLINE package style.

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

NXP3875G,215 by Nexperia

NXP3875G,215

Nexperia

NXP3875G,215 by Nexperia is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 0.15A. It is used for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 80MHz.

.15 A

50 V

SINGLE

200

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

80 MHz

PDTB143XTVL by Nexperia

PDTB143XTVL

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

140 MHz

BC857CQAZ by Nexperia

BC857CQAZ

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

.1 A

45 V

SINGLE

420

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz

PDTA114YQAZ by Nexperia

PDTA114YQAZ

Nexperia

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;

BUILT IN BIAS RESISTANCE RATIO IS 4.7

COLLECTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-N3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

180 MHz

PUMB10F by Nexperia

PUMB10F

Nexperia

The Nexperia PUMB10F is a PNP BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a min DC current gain of 100 (hFE), max collector-emitter voltage of 50V, and max collector current of 0.1A. This small outline transistor is surface mountable with Gull Wing terminals, suitable for AEC-Q101 automotive standards.

BUILT IN BIAS RESISTOR RATIO IS 21

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PUMH7F by Nexperia

PUMH7F

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PZT2222A/ZLF by Nexperia

PZT2222A/ZLF

Nexperia

Nexperia's PZT2222A/ZLF is a NPN BJT transistor with hFE of 75, VCE of 40V, and fT of 300MHz. Ideal for switching applications due to its fast ton of 35ns and toff of 250ns. Features GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.

COLLECTOR

.6 A

40 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

250 ns

35 ns

PZT2222A/ZLX by Nexperia

PZT2222A/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 4;

COLLECTOR

.6 A

40 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

250 ns

35 ns

PZT4401/ZLX by Nexperia

PZT4401/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;

COLLECTOR

.6 A

40 V

SINGLE

80

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

250 ns

35 ns

PZTA14/ZLF by Nexperia

PZTA14/ZLF

Nexperia

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

COLLECTOR

.5 A

DARLINGTON

20000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

PZTA14/ZLX by Nexperia

PZTA14/ZLX

Nexperia

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

COLLECTOR

.5 A

DARLINGTON

20000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

PZTA42/ZLX by Nexperia

PZTA42/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

COLLECTOR

.5 A

300 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

50 MHz

PZTA92/ZLX by Nexperia

PZTA92/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 4;

COLLECTOR

.1 A

300 V

SINGLE

25

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

PQMD16Z by Nexperia

PQMD16Z

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

BUILT IN BIAS RESISTANCE RATIO IS 2.13

COLLECTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

PQMH11Z by Nexperia

PQMH11Z

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: NO LEAD;

BUILT IN BIAS RESISTANCE RATIO IS 1

COLLECTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

230 MHz

BCX51-10F by Nexperia

BCX51-10F

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 145 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;

COLLECTOR

1 A

45 V

SINGLE

63

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

145 MHz

ADA114EUQ-13 by Diodes Incorporated

ADA114EUQ-13

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTOR, HIGH RELIABILITY;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADC124EUQ-13 by Diodes Incorporated

ADC124EUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA144ECAQ-7 by Diodes Incorporated

ADTA144ECAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA144EUAQ-13 by Diodes Incorporated

ADTA144EUAQ-13

Diodes Incorporated

ADTA144EUAQ-13 by Diodes Inc. is a PNP BJT with 50V VCEO, 0.1A IC, and 250MHz fT. It comes in a small outline package and has a built-in resistor for ease of use. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency.

HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

NSBC115EPDXV6T1G by Onsemi

NSBC115EPDXV6T1G

Onsemi

NSBC115EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for applications requiring low power dissipation in a compact package, such as signal amplification in electronic circuits.

BUILT IN BAIS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

.5 W

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

.25 V

BCV49H6327XTSA1 by Infineon Technologies

BCV49H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

SINGLE

AMPLIFIER

SILICON

150 MHz

PUMD12/ZLF by Nexperia

PUMD12/ZLF

Nexperia

PUMD12/ZLF by Nexperia is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, hFE of 80, VCE of 50V, and IC of 0.1A. This surface-mount transistor has a max operating temp of 150°C and comes in a small outline package shape.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD12/ZLX by Nexperia

PUMD12/ZLX

Nexperia

PUMD12/ZLX by Nexperia is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor for switching applications. With a max operating temp of 150°C, it has a max collector-emitter voltage of 50V and max collector current of 0.1A, making it suitable for various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD15/ZLF by Nexperia

PUMD15/ZLF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD15/ZLX by Nexperia

PUMD15/ZLX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Package Shape: RECTANGULAR;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PUMD6/ZLF by Nexperia

PUMD6/ZLF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 200;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

200

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PUMD9/ZLF by Nexperia

PUMD9/ZLF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 100; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD9/ZLX by Nexperia

PUMD9/ZLX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G6; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD9/ZLZ by Nexperia

PUMD9/ZLZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PBSS304NXZ by Nexperia

PBSS304NXZ

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 4.7 A;

COLLECTOR

4.7 A

70 pF

60 V

SINGLE

75

TO-243AA

R-PSSO-F3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.1 W

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

130 MHz

.245 V

PUMD2/ZLH by Nexperia

PUMD2/ZLH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMD2/ZLZ by Nexperia

PUMD2/ZLZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMH9/ZLF by Nexperia

PUMH9/ZLF

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMH9/ZLH by Nexperia

PUMH9/ZLH

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.7; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMH9/ZLX by Nexperia

PUMH9/ZLX

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; Transistor Element Material: SILICON;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PUMH9/ZLZ by Nexperia

PUMH9/ZLZ

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

PUMB17/ZLX by Nexperia

PUMB17/ZLX

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; Terminal Position: DUAL;

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

60

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PBHV9540XX by Nexperia

PBHV9540XX

Nexperia

Small Signal Bipolar Transistors; Reference Standard: AEC-Q101; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

e3

1

260

AEC-Q101

TIN

30

PRMH13Z by Nexperia

PRMH13Z

Nexperia

Small Signal Bipolar Transistors; Reference Standard: AEC-Q101; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

e3

1

260

AEC-Q101

TIN

30

BC859CW/ZLF by Nexperia

BC859CW/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC859CW/ZLX by Nexperia

BC859CW/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz