Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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2SAR533PT100
ROHM
ROHM 2SAR533PT100 is a PNP BJT transistor with max. power dissipation of 2W, hFE of 180, and max. collector-emitter voltage of 50V. Ideal for switching applications in small outline packages, it operates at up to 150°C with a max. collector current of 3A and transition frequency of 300MHz.
COLLECTOR
3 A
50 V
SINGLE
180
R-PSSO-F3
e2
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
2 W
Not Qualified
Other Transistors
YES
TIN COPPER
FLAT
10
SWITCHING
SILICON
300 MHz
2SCR512PT100
ROHM 2SCR512PT100 is a NPN BJT transistor with max. collector-emitter voltage of 30V and max. collector current of 2A. It has a min. DC current gain of 200, making it ideal for switching applications at up to 150°C operating temperature. The small outline package with flat terminals and surface mount capability enhances its versatility in various electronic designs.
2 A
30 V
200
NPN
320 MHz
KTC4373O-TP
Micro Commercial Components
KTC4373O-TP by Micro Commercial Components is a NPN BJT with hFE of 80, VCE of 120V, and IC of 0.8A. Ideal for small outline applications requiring high transition frequency up to 120MHz in temperatures up to 150°C.
LOW NOISE
.8 A
120 V
80
e3
Matte Tin (Sn)
120 MHz
KTC4373Y-TP
KTC4373Y-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 120, VCE of 120V, and fT of 120MHz. Ideal for small signal applications in electronics due to its high gain, low collector current, and fast transition frequency. Suitable for surface mount designs requiring compact outline and high temperature tolerance up to 150°C.
120
SSM2212RZ-RL
Analog Devices
Analog Devices' SSM2212RZ-RL is a NPN BJT with 2 elements, built-in diode, and max VCEsat of 0.2V. Ideal for amplifier applications, it has hFE of 300, operates up to 150 °C, and handles IC up to 0.02A. With a transition frequency of 200MHz, this transistor is surface mountable in a small outline package.
.02 A
40 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
300
MS-012AA
R-PDSO-G8
2
8
Matte Tin (Sn) - annealed
GULL WING
DUAL
30
AMPLIFIER
200 MHz
.2 V
SSM2212RZ
SSM2212RZ by Analog Devices is a small signal NPN bipolar junction transistor (BJT) with a max VCEsat of 0.2V and a min DC current gain (hFE) of 300. It is commonly used as an amplifier in various applications due to its high transition frequency of 200MHz.
2STR1230
STMicroelectronics
2STR1230 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max collector current of 1.5 A, a voltage rating of 30 V, and operates up to 150 °C. Its surface mount design ensures efficient space utilization in electronic circuits.
1.5 A
R-PDSO-G3
.5 W
MATTE TIN
STX715-AP
STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.
80 V
40
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NOT SPECIFIED
.9 W
NO
THROUGH-HOLE
BOTTOM
50 MHz
NSBC114EDXV6T5G
Onsemi
NSBC114EDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline package with matte tin finish operates up to 150 °C, making it suitable for various electronic devices.
BUILT IN BIAS RESISTOR RATIO IS 1
.1 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
35
R-PDSO-F6
6
BIP General Purpose Small Signal
NSBC123JDXV6T5G
NSBC123JDXV6T5G by Onsemi is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.25V, hFE of 80, and IC of 0.1A. With max operating temp at 150 °C, it's ideal for small outline SMT designs requiring low power dissipation.
BUILT IN BIAS RESISTOR RATIO 21.36
-55 Cel
.25 V
BC847BLD-7
Diodes Incorporated
Diodes Inc. BC847BLD-7 is a NPN BJT with 150 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal amplification in electronic circuits due to its 0.3W Ptot, 0.2A IC, and SOT-23 package with Gull Wing terminals. Suitable for applications requiring high gain and low power consumption in compact designs.
.2 A
45 V
150
.3 W
100 MHz
MMBT5401-D87Z
MMBT5401-D87Z by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 150V and a max collector current of 0.6A. It is commonly used for switching applications due to its high DC current gain (hFE) of 50 and fast nominal transition frequency of 100MHz.
.6 A
150 V
50
TO-236AB
.225 W
NSVMUN2236T1G
NSVMUN2236T1G by Onsemi is a NPN BJT with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150 °C and peak reflow temp of 260°C. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.
BUILT-IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
.338 W
AEC-Q101
ADTA114YUAQ-13
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 4.7
68
.33 W
AEC-Q101; IATF 16949, MIL-STD-202
250 MHz
ADTA124ECAQ-13
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
HIGH RELIABILITY
56
.31 W
ADTC144ECAQ-13
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISITOR RATIO IS 1
FMMT416TA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
.5 A
8 pF
100 V
100
40 MHz
.1 V
NSCT3904LT1G
NSCT3904LT1G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
4 pF
TO-236
250 ns
70 ns
.3 V
NSCT3904LT3G
NSCT3904LT3G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact small outline package style.
MMDT3904-TPQ2
NPN; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; Minimum DC Current Gain (hFE): 100;
JANTX2N2221AUB/TR
Microsemi
Small Signal Bipolar Transistors;
MMSS8050-H-TPS01
Small Signal Bipolar Transistors; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 200; Maximum Collector-Emitter Voltage: 25 V;
25 V
BC337-25RLRAG
BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.
160
e1
.625 W
TIN SILVER COPPER
210 MHz
2SC3624-T1B-A
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .15 A; No. of Elements: 1;
.15 A
e6
TIN BISMUTH
BA12003BF-E2
Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BA12004BF-E2
Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
NSVEMT1DXV6T5G
NSVEMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.5V, hFE of 120, and max IC of 0.1A. With a max operating temp of 150 °C and AEC-Q101 standard compliance, it offers high performance in small outline packages.
SEPARATE, 2 ELEMENTS
140 MHz
.5 V
DSM80100M-7
PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
SINGLE WITH BUILT-IN DIODE
R-PDSO-G6
NSVDTA123EM3T5G
NSVDTA123EM3T5G by Onsemi is a PNP BJT with built-in resistor for switching applications. Features include hFE of 8, VCE of 50V, and IC of 0.1A. Its small outline package with matte tin finish makes it suitable for surface mount designs in automotive electronics.
BUILT IN BIAS RESISTANCE RATIO IS 1
R-PDSO-F3
DSM80101M-7
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G6; Minimum DC Current Gain (hFE): 120;
BSP61H6327XTSA1
Infineon Technologies
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;
1 A
60 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
2000
R-PDSO-G4
4
TIN
BC857BL3E6327XTMA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e4;
220
R-XBCC-N3
e4
UNSPECIFIED
CHIP CARRIER
GOLD
NO LEAD
BCP49H6327XTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
DARLINGTON
BCP5310H6327XTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
63
125 MHz
BCP5316H6327XTSA1
BCP5316H6327XTSA1 by Infineon is a PNP BJT with 4 terminals, 2W power dissipation, and 80V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 100 and operates up to 150°C. This surface-mount transistor in a small outline package offers high performance with a transition frequency of 125MHz.
BCR129SH6327XTSA1
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;
BUILT-IN BIAS RESISTOR
150 MHz
BCR183UE6327HTSA1
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;
BCX5316E6433HTMA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSSO-F3;
BCX5616E6433HTMA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
BSP50H6327XTSA1
Infineon's BSP50H6327XTSA1 is a NPN BJT with Darlington configuration, ideal for switching applications. Features include hFE of 2000, VCE of 45V, and IC of 1A. With a fT of 200MHz, this transistor offers fast turn-on/off times making it suitable for high-speed operations in compact designs.
1500 ns
400 ns
BSP51H6327XTSA1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;
BSP52H6327XTSA1
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): SMALL OUTLINE;
BSP62H6327XTSA1
BSP62H6327XTSA1 by Infineon is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has a hFE of 2000, Vce of 80V, and fT of 200MHz. Ideal for switching applications, this transistor offers fast turn-on/off times and can handle up to 1A collector current in a surface-mount package.
MMBTA42LT1HTSA1
Infineon's MMBTA42LT1HTSA1 is a NPN BJT transistor with hFE of 40, VCE of 300V, and IC of 0.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 70MHz.
300 V
70 MHz
DDC144TH-7-F
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BUILT IN BIAS RESISTOR
ZDT694QTA
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
130 MHz
NSVMUN5333DW1T3G
NSVMUN5333DW1T3G by Onsemi is a Small Signal BJT with NPN and PNP types. It features separate elements with built-in resistor, VCEsat of 0.25V, and hFE min of 80. Ideal for automotive applications due to AEC-Q101 standard compliance and max operating temperature of 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS 10
NPN AND PNP
.385 W
MCH5541-TL-E
MCH5541-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels. It features 0.5W power dissipation, 200 min hFE, and 0.7A max collector current. Ideal for applications requiring surface mount technology in environments up to 150 °C.
.7 A
Tin/Bismuth (Sn/Bi)
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