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NSVMUN2236T1G

Onsemi

NSVMUN2236T1G by Onsemi

NSVMUN2236T1G by Onsemi is a NPN BJT with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150 °C and peak reflow temp of 260°C. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Newark

USA . 18,000 parts In-Stock

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Chip Stock

USA . 80,000 parts In-Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 436 parts In-Stock

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Kulean Microsystems

USA . 7,499 parts In-Stock

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TANS Electronics

Latvia . 7,006 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 672 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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Problanco Electronics

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Overview

Unlock the power of precision with the NSVMUN2236T1G by Onsemi. Crafted with unparalleled quality and expertise, this Small Signal Bipolar Junction Transistor is designed for optimal performance in switching applications. With a built-in resistor, NPN polarity, and low VCEsat, this device offers seamless integration and reliable operation. Elevate your projects with the superior benefits and value this transistor brings, from its high DC current gain to its wide operating temperature range. Trust in Onsemi for cutting-edge technology that delivers outstanding results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for a wide range of electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for applications requiring a resistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and reliable switching performance.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto PCBs, saving time and enhancing production efficiency.

Maximum VCEsat: 0.25 V

Low VCEsat minimizes power dissipation and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape provides a compact footprint, ideal for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals offer secure and reliable solder connections, ensuring consistent performance under various environmental conditions.

No. of Terminals: 3

Three terminals provide easy connectivity and enable simple integration into electronic circuits.

Maximum Power Dissipation (Abs): 0.338 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on a PCB, making it suitable for compact electronic designs.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures reliable and consistent amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function effectively in various environments.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides flexibility in different circuit configurations and operating conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor, ensuring long-term stability and functionality.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the transistor to operate in cold environments without compromising performance.

Maximum Collector Current (IC): 0.1 A

High collector current rating enables the transistor to handle moderate to high current loads with ease.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable electrical connections for the transistor.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit configuration and allows for easy connection to external components.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature ensures quick and efficient soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for lead-free soldering processes, complying with environmental regulations.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high-quality and reliable performance, making this transistor suitable for automotive applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVMUN2236T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSVMUN2236T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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