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NSBC123JDXV6T5G

Onsemi

NSBC123JDXV6T5G by Onsemi

NSBC123JDXV6T5G by Onsemi is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.25V, hFE of 80, and IC of 0.1A. With max operating temp at 150 °C, it's ideal for small outline SMT designs requiring low power dissipation.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,985 parts In-Stock

1+ parts

-

100+ parts

$0.065

1k+ parts

$0.054

10k+ parts

$0.048

15,985

-

$0.065

$0.054

$0.048

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.060

8,000

-

-

-

$0.060

Distributors (In-Stock)

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Digiode

USA . 1,119 parts In-Stock

1+ parts

$0.050

100+ parts

-

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1,119

$0.050

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Chip Stock

USA . 66,000 parts In-Stock

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66,000

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Vyrian

USA . 12,930 parts In-Stock

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12,930

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Flip Electronics

USA . 8,000 parts In-Stock

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8,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,074 parts In-Stock

1+ parts

$0.048

100+ parts

-

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1,074

$0.048

-

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Corohmni

South Africa . 254 parts In-Stock

1+ parts

$0.053

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-

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254

$0.053

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AZTECH Wire

Italy . 1,134 parts In-Stock

1+ parts

$11.790

100+ parts

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1,134

$11.790

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Kepictronics

USA . 56,000 parts In-Stock

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56,000

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SupplyDigital Components

Austria . 8,263 parts In-Stock

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8,263

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A-Z Elektronik GmbH

Germany . 6,530 parts In-Stock

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6,530

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TANS Electronics

Latvia . 6,009 parts In-Stock

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6,009

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Kulean Microsystems

USA . 5,755 parts In-Stock

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5,755

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Problanco Electronics

Mexico . 3,591 parts In-Stock

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3,591

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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UHIMA Technologies

Türkiye . 405 parts In-Stock

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405

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Overview

Discover the NSBC123JDXV6T5G by Onsemi, a top-notch Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured with precision and expertise by Onsemi, this NPN transistor boasts a separate configuration with built-in resistors, ensuring seamless functionality. With a maximum VCEsat of 0.25V and a minimum DC current gain of 80, this transistor offers reliable performance in various electronic circuits. Whether you're a hobbyist or a professional, the NSBC123JDXV6T5G provides unmatched value and efficiency, making it a must-have component for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile in different electronic designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast response times and efficient performance in on/off scenarios.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum VCEsat: 0.25 V

Low VCEsat ensures minimal power dissipation and high efficiency in switching operations, contributing to energy savings.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor for easy integration into various electronic systems and designs.

No. of Elements: 2

Having 2 elements allows for more flexibility in circuit configurations and applications, enhancing the transistor's versatility.

No. of Terminals: 6

With 6 terminals, this transistor offers enhanced connectivity options and more possibilities for circuit connections.

Maximum Power Dissipation (Abs): 0.5 W

The high power dissipation capability ensures reliable performance under varying load conditions, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package size saves space on the PCB and enables compact electronic designs, ideal for portable devices and space-constrained applications.

Minimum DC Current Gain (hFE): 80

High DC current gain allows for better amplification and signal processing, contributing to improved overall performance of the transistor.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures reliability and stability in various environmental conditions, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides overvoltage protection and ensures safe operation in high-voltage applications.

Transistor Element Material: SILICON

Silicon material offers improved thermal conductivity and reliability, enhancing the transistor's performance and longevity.

Minimum Operating Temperature: -55 °C

The low operating temperature range allows for operation in extreme cold conditions, making it suitable for aerospace and outdoor applications.

Maximum Collector Current (IC): 0.1 A

The high collector current rating allows for handling higher current loads, making it suitable for power switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

Dual terminal position offers more flexibility in PCB layout and circuit design, enabling custom configurations and connections.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time ensures quick and efficient soldering process, reducing production time and improving assembly yield.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures compatibility with lead-free soldering processes, meeting industry standards for environmental compliance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC123JDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSBC123JDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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