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NSBC114EPDXV6T5

Onsemi

NSBC114EPDXV6T5 by Onsemi

NSBC114EPDXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max power dissipation of 0.5W, hFE of 35, and Vce of 50V. Ideal for switching applications, this transistor is surface mountable in a small outline package shape.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 242,000 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

242,000

-

$0.079

$0.066

$0.059

DigiKey

USA . 242,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

242,000

-

-

-

$0.100

Verical

USA . 138,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

138,000

-

-

-

$0.073

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,785 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

-

1,785

$0.056

-

-

-

Digiode

USA . 405 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

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405

$0.062

-

-

-

Chip Stock

USA . 73,000 parts In-Stock

1+ parts

-

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73,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 434 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

-

434

$0.056

-

-

-

Corphita

USA . 2,023 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

2,023

$0.058

-

-

-

Modulus Dynamics

Lithuania . 5 parts In-Stock

1+ parts

$1.355

100+ parts

$1.355

1k+ parts

$1.355

10k+ parts

-

5

$1.355

$1.355

$1.355

-

Continental Prestige Electronics

USA . 242,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.054

10k+ parts

-

242,000

-

-

$0.054

-

RC Electronics

USA . 88,000 parts In-Stock

1+ parts

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100+ parts

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88,000

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SupplyDigital Components

Austria . 7,066 parts In-Stock

1+ parts

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100+ parts

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7,066

-

-

-

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Kulean Microsystems

USA . 6,490 parts In-Stock

1+ parts

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100+ parts

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6,490

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Kepictronics

USA . 5,720 parts In-Stock

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5,720

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TANS Electronics

Latvia . 5,296 parts In-Stock

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5,296

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-

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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2,500

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-

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A-Z Elektronik GmbH

Germany . 1,716 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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1,716

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-

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UHIMA Technologies

Türkiye . 642 parts In-Stock

1+ parts

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100+ parts

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642

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Problanco Electronics

Mexico . 269 parts In-Stock

1+ parts

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269

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Overview

Unleash the power of innovation with the NSBC114EPDXV6T5 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With NPN and PNP configurations, this transistor provides seamless operation and reliability. Its package body material ensures durability, while the built-in resistor enhances functionality. Perfect for a wide range of electronic devices, this transistor is a game-changer in the industry. Elevate your projects with the NSBC114EPDXV6T5 and experience unmatched quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in different circuit designs and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in those scenarios.

Surface Mount: YES

Can be easily mounted on the surface of a PCB, facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB.

Maximum Power Dissipation (Abs): 0.5 W

Can handle relatively high power dissipation, suitable for various power levels in circuits.

Minimum DC Current Gain (hFE): 35

Provides consistent performance and amplification in circuits.

Maximum Collector-Emitter Voltage: 50 V

Can withstand high voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling relatively high current levels, suitable for many circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EPDXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EPDXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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