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NSBC114EPDXV6T1

Onsemi

NSBC114EPDXV6T1 by Onsemi

NSBC114EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistor, max collector-emitter voltage of 50V, and max power dissipation of 0.5W. This surface-mount transistor has a package style of small outline and terminal finish in tin.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

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EMSNET

USA . 3,900 parts In-Stock

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Digiode

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$1.698

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$1.530

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AZTECH Wire

Italy . 117 parts In-Stock

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Mexico . 7,863 parts In-Stock

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TANS Electronics

Latvia . 6,237 parts In-Stock

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SupplyDigital Components

Austria . 4,317 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 711 parts In-Stock

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Overview

Enhance your electronic projects with the NSBC114EPDXV6T1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers seamless switching capabilities. Manufactured by Onsemi, known for their superior products, this transistor features separate NPN and PNP elements with built-in resistors, making it perfect for a wide range of applications. With a maximum collector-emitter voltage of 50V and maximum collector current of 0.1A, this transistor provides reliable performance. Trust Onsemi to deliver high-quality components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Offers versatility for different circuit designs and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Convenient for use in circuits requiring multiple transistors, and the built-in resistor simplifies circuit design.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in these scenarios.

Surface Mount: YES

Supports easy and efficient surface mount installation, saving time and effort during assembly.

Package Shape: RECTANGULAR

Compact rectangular shape allows for space-efficient placement on PCBs.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for a variety of low-power applications.

Minimum DC Current Gain (hFE): 35

Ensures reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Handles moderate voltages, making it suitable for a range of circuit designs.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels for various applications.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance for reliable performance.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow processes during assembly.

Peak Reflow Temperature °C: 260

Designed to withstand high reflow temperatures during assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EPDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EPDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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