Loading...

NSBC113EPDXV6T1

Onsemi

NSBC113EPDXV6T1 by Onsemi

NSBC113EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max. collector-emitter voltage of 50V, and max. collector current of 0.1A. This transistor comes in a small outline package shape suitable for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,000

-

-

-

-

Vyrian

USA . 8,861 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,861

-

-

-

-

Digiode

USA . 2,009 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,009

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 57 parts In-Stock

1+ parts

$11.250

100+ parts

-

1k+ parts

-

10k+ parts

-

57

$11.250

-

-

-

Kulean Microsystems

USA . 6,397 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,397

-

-

-

-

Problanco Electronics

Mexico . 5,770 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,770

-

-

-

-

TANS Electronics

Latvia . 4,988 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,988

-

-

-

-

SupplyDigital Components

Austria . 3,511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,511

-

-

-

-

Corphita

USA . 2,327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,327

-

-

-

-

Corohmni

South Africa . 476 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

476

-

-

-

-

UHIMA Technologies

Türkiye . 445 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

445

-

-

-

-

Overview

Upgrade your electronics with the NSBC113EPDXV6T1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN and PNP transistor features a separate configuration with built-in resistors, perfect for switching applications. With a maximum power dissipation of 0.5W and a maximum collector-emitter voltage of 50V, this transistor offers exceptional performance and reliability. Whether you're a hobbyist or a professional, this product provides excellent value and benefits, making it a must-have for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Versatile compatibility for different circuit designs and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers flexibility in circuit design and simplifies the component layout with built-in resistor.

Transistor Application: SWITCHING

Designed for efficient switching applications, ensuring reliable performance.

Surface Mount: YES

Enables easy and convenient mounting on the circuit board, saving space and improving manufacturability.

Package Shape: RECTANGULAR

Compact size and shape for efficient PCB layout and space-saving design.

Maximum Power Dissipation (Abs): 0.5 W

Capable of handling moderate power dissipation without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 3

Ensures stable and consistent amplification of input signals within the specified range.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing a wide range of usability.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels for switching applications without being overloaded.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC113EPDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC113EPDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19