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NSBC113EDXV6T1G

Onsemi

NSBC113EDXV6T1G by Onsemi

NSBC113EDXV6T1G by Onsemi is a NPN BJT with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, 0.1A max collector current, and 0.5W power dissipation. Ideal for switching applications, this transistor is surface mountable in a small outline package shape.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 284,000 parts In-Stock

1+ parts

-

100+ parts

$0.102

1k+ parts

$0.085

10k+ parts

$0.075

284,000

-

$0.102

$0.085

$0.075

DigiKey

USA . 284,000 parts In-Stock

1+ parts

-

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$0.130

284,000

-

-

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$0.130

Verical

USA . 168,000 parts In-Stock

1+ parts

-

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$0.094

168,000

-

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$0.094

Flip Electronics (Authorized)

USA . 160,000 parts In-Stock

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160,000

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Mouser Electronics

USA . 2,713 parts In-Stock

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$0.092

2,713

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$0.092

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 112 parts In-Stock

1+ parts

$0.078

100+ parts

-

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112

$0.078

-

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Nova Conductors

Japan . 100 parts In-Stock

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$0.100

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100

$0.100

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Vyrian

USA . 179,078 parts In-Stock

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179,078

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Flip Electronics

USA . 160,000 parts In-Stock

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160,000

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Chip Stock

USA . 33,000 parts In-Stock

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33,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 178,999 parts In-Stock

1+ parts

$0.070

100+ parts

-

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178,999

$0.070

-

-

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Corphita

USA . 161 parts In-Stock

1+ parts

$0.074

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-

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161

$0.074

-

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Corohmni

South Africa . 79 parts In-Stock

1+ parts

$0.082

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79

$0.082

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Netroflash

USA . 500 parts In-Stock

1+ parts

$0.100

100+ parts

$0.098

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500

$0.100

$0.098

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Kepictronics

USA . 252,000 parts In-Stock

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252,000

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Continental Prestige Electronics

USA . 248,000 parts In-Stock

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$0.098

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248,000

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$0.098

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QUARKTWIN TECHNOLOGY LTD

USA . 14,476 parts In-Stock

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14,476

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Perfect Parts

USA . 8,960 parts In-Stock

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8,960

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SupplyDigital Components

Austria . 8,320 parts In-Stock

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8,320

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Glotronic Ltd.

UK . 3,200 parts In-Stock

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3,200

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TANS Electronics

Latvia . 2,973 parts In-Stock

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2,973

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Problanco Electronics

Mexico . 2,740 parts In-Stock

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2,740

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Kulean Microsystems

USA . 1,949 parts In-Stock

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1,949

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UHIMA Technologies

Türkiye . 984 parts In-Stock

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984

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Overview

Upgrade your electronic devices with the NSBC113EDXV6T1G from Onsemi, a leading manufacturer in small signal Bipolar Junction Transistors (BJT). Designed for switching applications, this NPN transistor boasts a compact rectangular package with separate elements and built-in resistors. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 3, this transistor delivers high performance in a small outline package. Experience improved efficiency and reliability in your circuits with the NSBC113EDXV6T1G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile for different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor convenient for use in compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient switching performance.

Surface Mount: YES

Being surface mountable allows for easy integration into SMD circuit boards, making manufacturing processes more efficient.

Package Shape: RECTANGULAR

The rectangular package shape enables easy placement and alignment on the PCB, improving assembly accuracy.

Terminal Form: FLAT

The flat terminal form facilitates soldering and ensures a secure electrical connection, enhancing the reliability of the transistor in the circuit.

Max Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels, suitable for various electronic applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices with limited board space.

Min DC Current Gain (hFE): 3

The minimum DC current gain of 3 ensures reliable amplification of input signals, enhancing the performance of the transistor in signal processing circuits.

Max Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V allows for safe operation in circuits with varying voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making this transistor suitable for a wide range of operating conditions.

Max Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it ideal for various low-power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability in the circuit.

Terminal Position: DUAL

The dual terminal position allows for easy connection and mounting on the PCB, simplifying the assembly process.

Max Time At Peak Reflow Temperature (s): 30

The maximum time of 30 seconds at peak reflow temperature ensures proper soldering and thermal stability during the assembly process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes, ensuring reliable solder joints.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC113EDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC113EDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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