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NSBC114EDXV6T1G

Onsemi

NSBC114EDXV6T1G by Onsemi

NSBC114EDXV6T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline package with matte tin finish operates up to 150°C, making it suitable for various electronic devices.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 3 parts In-Stock

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$0.032

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Rochester

USA . 12,000 parts In-Stock

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$0.060

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Mouser Electronics

USA . 83,030 parts In-Stock

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$0.380

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$0.148

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$0.098

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$0.083

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$0.380

$0.148

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$0.083

Flip Electronics (Authorized)

USA . 1,704,000 parts In-Stock

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Newark

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Arrow

USA . 36,000 parts In-Stock

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Verical

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Chip1Stop

Japan . 4,000 parts In-Stock

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DigiKey

USA . 2,480 parts In-Stock

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Distributors (In-Stock)

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Freelance Electronics

USA . 74 parts In-Stock

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Bristol Electronics

USA . 6,835 parts In-Stock

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$0.131

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$0.052

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$0.039

6,835

$0.263

$0.131

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Digiode

USA . 758 parts In-Stock

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$0.332

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Vyrian

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Chip Stock

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IBS Electronics

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$0.107

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Martec Srl

Italy . 8,225 parts In-Stock

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NAC Semi

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Sensible Micro Corp

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ComSIT Distribution GmbH

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Nova Conductors

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Corohmni

South Africa . 276 parts In-Stock

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Semicontronic

India . 251,533 parts In-Stock

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Ampacity Inc.

Singapore . 223,785 parts In-Stock

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Corphita

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Aztec Data Supply Inc.

USA . 343 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Component Connect

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Germany . 6,852 parts In-Stock

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Lixinc

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iodParts Technologies Inc.

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Continental Prestige Electronics

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UHIMA Technologies

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Overview

Elevate your electronic projects with the NSBC114EDXV6T1G by Onsemi, a top-tier manufacturer of Small Signal Bipolar Junction Transistors (BJT). This NPN transistor offers seamless switching capabilities, making it ideal for a wide range of applications. With its high-quality construction and built-in resistor elements, this transistor ensures reliable performance at all times. Experience the value and benefits of this product as you unlock endless possibilities in your designs. Trust Onsemi to deliver excellence through innovation and quality craftsmanship.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in electronic designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it easy to implement in projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in switching circuits.

Surface Mount: YES

Ideal for surface mount applications where space is limited, allowing for compact and efficient circuit designs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides ease of handling and placement on the PCB during assembly.

Terminal Form: FLAT

Flat terminals facilitate easy soldering and provide a secure connection to the PCB, ensuring stability in the circuit.

No. of Elements: 2

Having 2 elements allows for increased functionality and versatility in circuit design.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation rating, the transistor can handle power efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures stable and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Can withstand high collector-emitter voltages, ensuring durability and reliability in the circuit.

Transistor Element Material: SILICON

Silicon transistor elements offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, the transistor can handle moderate current loads effectively.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for easy mounting and connection in the circuit, enhancing overall circuit performance.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and assembly.

Peak Reflow Temperature °C: 260

Withstands high peak reflow temperatures, making it suitable for surface mount assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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