Loading...

NSBC114EDP6T5G

Onsemi

NSBC114EDP6T5G by Onsemi

NSBC114EDP6T5G by Onsemi is a NPN BJT transistor with 2 elements, built-in resistor, and hFE of 35. It is used for switching applications with max collector-emitter voltage of 50V and max current of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 13,765 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

13,765

$0.048

-

-

-

DigiKey

USA . 7,900 parts In-Stock

1+ parts

$0.410

100+ parts

$0.157

1k+ parts

$0.104

10k+ parts

$0.093

7,900

$0.410

$0.157

$0.104

$0.093

Mouser Electronics

USA . 2,216 parts In-Stock

1+ parts

$0.410

100+ parts

$0.158

1k+ parts

$0.093

10k+ parts

$0.072

2,216

$0.410

$0.158

$0.093

$0.072

Rochester

USA . 457,587 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.059

10k+ parts

$0.053

457,587

-

$0.071

$0.059

$0.053

Verical

USA . 120,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

120,000

-

-

-

$0.066

Flip Electronics (Authorized)

USA . 72,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

72,000

-

-

-

-

Chip1Stop

Japan . 15,375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,375

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,416 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

10k+ parts

-

1,416

$0.033

-

-

-

Vyrian

USA . 1,007 parts In-Stock

1+ parts

$0.035

100+ parts

-

1k+ parts

-

10k+ parts

-

1,007

$0.035

-

-

-

Flip Electronics

USA . 136,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

136,000

-

-

-

-

Chip Stock

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,309 parts In-Stock

1+ parts

$0.032

100+ parts

-

1k+ parts

-

10k+ parts

-

2,309

$0.032

-

-

-

Corohmni

South Africa . 220 parts In-Stock

1+ parts

$0.035

100+ parts

-

1k+ parts

-

10k+ parts

-

220

$0.035

-

-

-

Component Stockers USA

USA . 558,980 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

558,980

$0.040

$0.040

$0.040

$0.040

Continental Prestige Electronics

USA . 457,640 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.098

10k+ parts

-

457,640

-

-

$0.098

-

SupplyDigital Components

Austria . 8,327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,327

-

-

-

-

TANS Electronics

Latvia . 4,913 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,913

-

-

-

-

Problanco Electronics

Mexico . 4,444 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,444

-

-

-

-

Kulean Microsystems

USA . 3,606 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,606

-

-

-

-

UHIMA Technologies

Türkiye . 708 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

708

-

-

-

-

Overview

Enhance your electronic projects with the NSBC114EDP6T5G from Onsemi! This NPN Small Signal Bipolar Junction Transistor is a game-changer in switching applications, offering high-quality performance and reliability. With a compact package body and built-in resistor, this transistor is easy to integrate and delivers exceptional power dissipation. Whether you're a hobbyist or a professional, this versatile component will take your projects to the next level. Trust Onsemi's reputation for excellence and choose the NSBC114EDP6T5G for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications and provide high amplification.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having built-in resistors simplifies circuit design and saves board space, making the transistor convenient for use in compact devices.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring fast and efficient performance.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on PCBs, enhancing reliability and ease of assembly.

Package Shape: RECTANGULAR

Rectangular package shape makes the transistor compatible with standard mounting techniques and PCB layouts.

Terminal Form: FLAT

Flat terminal form facilitates soldering and ensures secure electrical connections.

Maximum Power Dissipation (Abs): 0.408 W

High maximum power dissipation allows the transistor to handle moderate power levels, making it suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 35

Minimum DC current gain of 35 ensures reliable amplification and switching performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range of 150 °C ensures reliable performance even in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating of 50V allows the transistor to handle higher voltage levels, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance, reliability, and efficiency.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A allows the transistor to handle moderate current levels, making it suitable for various applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and reliable electrical connections.

Terminal Position: DUAL

Dual terminal position facilitates easy and secure mounting on the PCB, enhancing reliability and ease of assembly.

Maximum Time At Peak Reflow Temperature (s): 30

Maximum time at peak reflow temperature of 30 seconds ensures safe assembly and soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C allows for reliable and efficient soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EDP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EDP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19