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NSBC114EPDXV6T1G

Onsemi

NSBC114EPDXV6T1G by Onsemi

NSBC114EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors in a rectangular package, supporting a max collector-emitter voltage of 50V and operating temperature up to 150°C. With a min hFE of 35, this transistor has a power dissipation of 0.5W and can handle a max collector current of 0.1A.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 3,700 parts In-Stock

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$0.056

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$0.056

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Master Electronics

USA . 2,850 parts In-Stock

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$0.071

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$0.064

2,850

$0.071

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$0.064

Mouser Electronics

USA . 50,124 parts In-Stock

1+ parts

$0.380

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$0.148

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$0.098

10k+ parts

$0.066

50,124

$0.380

$0.148

$0.098

$0.066

DigiKey

USA . 28,000 parts In-Stock

1+ parts

$0.380

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$0.148

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$0.097

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$0.087

28,000

$0.380

$0.148

$0.097

$0.087

EBV Elektronik

Germany . 16,000 parts In-Stock

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Rochester

USA . 4,425 parts In-Stock

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$0.066

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$0.054

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$0.049

4,425

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$0.066

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$0.049

Chip1Stop

Japan . 3,900 parts In-Stock

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$0.064

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$0.052

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$0.064

$0.052

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Verical

USA . 2,850 parts In-Stock

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$0.081

2,850

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Digiode

USA . 430 parts In-Stock

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$0.051

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Vyrian

USA . 1,715 parts In-Stock

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IBS Electronics

USA . 3,500 parts In-Stock

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$0.082

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$0.073

3,500

$0.082

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$0.073

Chip Stock

USA . 73,000 parts In-Stock

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NAC Semi

USA . 16,000 parts In-Stock

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Velocity Electronics

USA . 11,691 parts In-Stock

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

France . 3,693 parts In-Stock

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Dan-Mar Components

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Nova Conductors

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Ampacity Inc.

Singapore . 24,702 parts In-Stock

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$0.046

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$0.046

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Corphita

USA . 663 parts In-Stock

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$0.049

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Component Stockers USA

USA . 113,894 parts In-Stock

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$0.040

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$0.050

113,894

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$0.050

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$0.050

Corohmni

South Africa . 483 parts In-Stock

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Perfect Parts

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Eastek

USA . 20,000 parts In-Stock

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Lixinc

USA . 16,593 parts In-Stock

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Futuretech Components

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A-Z Elektronik GmbH

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Continental Prestige Electronics

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SupplyDigital Components

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Aranea Global

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Argo Parts USA

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

Türkiye . 691 parts In-Stock

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Kulean Microsystems

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Discover the NSBC114EPDXV6T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With separate NPN and PNP elements and built-in resistors, this transistor offers reliability and efficiency. Its compact design and surface-mount capabilities make it easy to integrate into various electronic devices. Trust in Onsemi's reputation for excellence and innovation and experience the value and benefits this transistor brings to your projects. Upgrade your electronics with the NSBC114EPDXV6T1G today!

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type - NPN AND PNP

Offers versatility in circuit design as both NPN and PNP types are available.

Configuration - SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for separate usage of the two elements with the added convenience of built-in resistors.

Transistor Application - SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount - YES

Enables easy and efficient installation on a PCB, saving space and improving overall design.

Maximum Power Dissipation (Abs) - 0.5 W

Can handle moderate power dissipation, suitable for a variety of low to medium power applications.

Maximum Operating Temperature - 150 °C

Allows for reliable operation in a wide range of temperature environments.

Maximum Collector-Emitter Voltage - 50 V

Suitable for applications where a higher voltage handling capability is required.

Maximum Collector Current (IC) - 0.1 A

Able to handle moderate collector currents, suitable for various switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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