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NSBC113EPDXV6T5

Onsemi

NSBC113EPDXV6T5 by Onsemi

NSBC113EPDXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a max collector current of 0.1A. This transistor comes in a small outline package shape suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,396 parts In-Stock

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Vyrian

USA . 2,321 parts In-Stock

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Kulean Microsystems

USA . 6,552 parts In-Stock

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SupplyDigital Components

Austria . 6,505 parts In-Stock

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TANS Electronics

Latvia . 4,146 parts In-Stock

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Corphita

USA . 906 parts In-Stock

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UHIMA Technologies

Türkiye . 728 parts In-Stock

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Problanco Electronics

Mexico . 311 parts In-Stock

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Corohmni

South Africa . 281 parts In-Stock

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Overview

Discover the NSBC113EPDXV6T5 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance in switching applications. Manufactured by Onsemi, known for their innovative solutions, this transistor features separate NPN and PNP elements with built-in resistors for easy installation. With a maximum collector-emitter voltage of 50V and a maximum power dissipation of 0.5W, this transistor is a reliable choice for various electronic projects. Upgrade your designs with the NSBC113EPDXV6T5 and experience the superior quality and value it brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, increasing durability and reliability.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design, allowing for use in a variety of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Saves space and simplifies circuit design by having built-in resistors for each element.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and fast performance.

Surface Mount: YES

Enables easy and convenient mounting on printed circuit boards, saving assembly time.

Maximum Power Dissipation (Abs): 0.5 W

Can dissipate up to 0.5 watts of power, suitable for low to medium power applications.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of space on a PCB.

No. of Elements: 2

Two elements provide versatility in circuit design and functionality.

No. of Terminals: 6

Having six terminals allows for multiple connection options and configurations.

Maximum Collector-Emitter Voltage: 50 V

Can handle up to 50 volts, making it suitable for a wide range of applications.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability for reliable connections.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures, ensuring proper soldering during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC113EPDXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC113EPDXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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