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NSBC114EDXV6T1

Onsemi

NSBC114EDXV6T1 by Onsemi

NSBC114EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 35. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package style, flat terminals, and peak reflow temp of 260 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 41,000 parts In-Stock

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Vyrian

USA . 11,592 parts In-Stock

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NexGen Digital

USA . 4,207 parts In-Stock

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Digiode

USA . 1,024 parts In-Stock

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AZTECH Wire

Italy . 40 parts In-Stock

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$11.870

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RC Electronics

USA . 81,000 parts In-Stock

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$0.130

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QUARKTWIN TECHNOLOGY LTD

USA . 27,139 parts In-Stock

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SupplyDigital Components

Austria . 7,660 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,651 parts In-Stock

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TANS Electronics

Latvia . 6,151 parts In-Stock

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,221 parts In-Stock

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Corphita

USA . 1,547 parts In-Stock

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Kulean Microsystems

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Corohmni

South Africa . 393 parts In-Stock

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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Overview

Discover the power and precision of the Onsemi NSBC114EDXV6T1 Small Signal Bipolar Junction Transistor (BJT). Manufactured with top-quality materials and advanced technology, this NPN transistor with built-in resistor is perfect for switching applications. With a compact design and high performance capabilities, this transistor offers customers unparalleled value and reliability. Upgrade your electronics with the NSBC114EDXV6T1 and experience superior efficiency and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and cost-effective housing for the transistor.

Polarity or Channel Type: NPN

Allows for amplification and switching of signals in electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Enables the transistor to be used in applications where built-in resistance is required.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and low power dissipation.

Surface Mount: YES

Allows for easy placement and soldering on a circuit board.

Package Shape: RECTANGULAR

Fits well in modern electronics designs and allows for compact circuit layouts.

Terminal Form: FLAT

Facilitates proper connection to the circuit board and ensures a secure electrical connection.

No. of Elements: 2

Provides increased functionality and flexibility in circuit design.

No. of Terminals: 6

Offers multiple connection points for versatile integration into a circuit.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Saves space in circuit board layouts and allows for denser designs.

Minimum DC Current Gain (hFE): 35

Indicates the transistor's ability to amplify current, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 50 V

Can handle voltages up to 50V, suitable for a wide range of applications.

Transistor Element Material: SILICON

Provides good electrical properties and reliability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

Suits low to moderate current applications, offering versatility in circuit designs.

Terminal Finish: TIN

Ensures a reliable and low-resistance electrical connection.

Terminal Position: DUAL

Facilitates easy installation and connection to the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration, aiding in the soldering process.

Peak Reflow Temperature °C: 260

Suitable for high-temperature soldering processes, ensuring a secure connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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