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NSBC114EPDXV6T5G

Onsemi

NSBC114EPDXV6T5G by Onsemi

NSBC114EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and can operate at up to 150 °C. Suitable for surface mount designs in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 29,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 15,800 parts In-Stock

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15,800

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Vyrian

USA . 9,192 parts In-Stock

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Digiode

USA . 1,104 parts In-Stock

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AZTECH Wire

Italy . 218 parts In-Stock

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$17.950

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Perfect Parts

USA . 116,480 parts In-Stock

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Kepictronics

USA . 90,000 parts In-Stock

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Kulean Microsystems

USA . 6,786 parts In-Stock

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6,786

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 4,993 parts In-Stock

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SupplyDigital Components

Austria . 4,394 parts In-Stock

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TANS Electronics

Latvia . 3,277 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,640 parts In-Stock

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Corphita

USA . 1,230 parts In-Stock

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UHIMA Technologies

Türkiye . 747 parts In-Stock

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Corohmni

South Africa . 309 parts In-Stock

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Overview

Discover the power of the NSBC114EPDXV6T5G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. With NPN and PNP configurations, this transistor is perfect for switching applications. Its compact design and built-in resistor make it ideal for a wide range of electronic projects. Trust in Onsemi's reputation for excellence and innovation, and unlock the potential of your next project with the NSBC114EPDXV6T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP configurations allows for flexibility in circuit design and compatibility with different types of circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor helps simplify circuit design and saves space on the PCB, making it convenient for small signal switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance and efficient operation in switching circuits.

Surface Mount: YES

Allows for easy and convenient mounting on the surface of a PCB, saving space and simplifying manufacturing processes.

Maximum Power Dissipation (Abs): 0.5 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for use in a wide range of applications, providing versatility and compatibility.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EPDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EPDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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