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NSBC113EDXV6T1

Onsemi

NSBC113EDXV6T1 by Onsemi

NSBC113EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications due to its small outline package style and max collector current of 0.1A. Features flat terminals, tin finish, and peak reflow temp of 260°C for surface mount usage.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

36,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

36,000

-

-

-

$0.070

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

36,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.039

-

-

-

Digiode

USA . 2,009 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

2,009

$0.041

-

-

-

Chip Stock

USA . 66,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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66,000

-

-

-

-

Vyrian

USA . 4,207 parts In-Stock

1+ parts

-

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-

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4,207

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 208 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

-

10k+ parts

-

208

$0.037

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

$0.036

10k+ parts

-

2,000

$0.038

-

$0.036

-

Corphita

USA . 2,332 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

2,332

$0.039

-

-

-

Ampacity Inc.

Singapore . 35,858 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

35,858

$0.080

-

-

-

AZTECH Wire

Italy . 340 parts In-Stock

1+ parts

$19.710

100+ parts

-

1k+ parts

-

10k+ parts

-

340

$19.710

-

-

-

Continental Prestige Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.039

10k+ parts

-

36,000

-

-

$0.039

-

A-Z Elektronik GmbH

Germany . 7,275 parts In-Stock

1+ parts

-

100+ parts

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7,275

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 6,209 parts In-Stock

1+ parts

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6,209

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Kulean Microsystems

USA . 3,429 parts In-Stock

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100+ parts

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3,429

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-

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,500

-

-

-

-

Problanco Electronics

Mexico . 2,402 parts In-Stock

1+ parts

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100+ parts

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2,402

-

-

-

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SupplyDigital Components

Austria . 1,217 parts In-Stock

1+ parts

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100+ parts

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1,217

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TANS Electronics

Latvia . 625 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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625

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UHIMA Technologies

Türkiye . 214 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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214

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-

Overview

Unlock the potential of your electronic projects with the NSBC113EDXV6T1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a built-in resistor, this NPN transistor offers convenience and efficiency, making it ideal for a wide range of projects. Say goodbye to limitations and hello to endless possibilities with the NSBC113EDXV6T1. Choose reliability, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and widely applicable.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this product suitable for compact electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient performance.

Surface Mount: YES

This surface mount design allows for easy and compact integration onto circuit boards, ideal for modern electronics manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape enables easy placement and arrangement on PCBs, providing flexibility in design.

Terminal Form: FLAT

Flat terminals ensure secure soldering connections, improving overall reliability of the product.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 3

A minimum DC current gain of 3 ensures consistent and stable amplification performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for use in a wide range of applications, providing versatility and flexibility.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability, making this product a dependable choice.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, suitable for various electronic circuits.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and conductivity, contributing to the overall performance and reliability of the product.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connection options, making this product adaptable to different circuit layouts.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process during manufacturing without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC113EDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC113EDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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