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NSBC114EPDP6T5G

Onsemi

NSBC114EPDP6T5G by Onsemi

NSBC114EPDP6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.408W, and a min DC current gain of 35. With a max collector-emitter voltage of 50V and operating temperature of 150°C, this transistor is suitable for surface mount applications in various electronic circuits.

Median Price

$0.060

Lifecycle Status

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15

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1k+

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Arrow

USA . 10,730 parts In-Stock

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Mouser Electronics

USA . 16,249 parts In-Stock

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$0.360

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$0.081

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$0.061

16,249

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$0.138

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$0.061

DigiKey

USA . 5,363 parts In-Stock

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$0.360

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$0.138

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$0.091

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$0.081

5,363

$0.360

$0.138

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$0.081

Rochester

USA . 127,970 parts In-Stock

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$0.060

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Verical

USA . 113,000 parts In-Stock

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Chip1Stop

Japan . 11,700 parts In-Stock

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EBV Elektronik

Germany . 8,000 parts In-Stock

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Digiode

USA . 877 parts In-Stock

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Vyrian

USA . 1,740 parts In-Stock

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Chip Stock

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Flip Electronics

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NAC Semi

USA . 8,000 parts In-Stock

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HZD GmbH

Germany . 7,923 parts In-Stock

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Nova Conductors

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Resion

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Corphita

USA . 856 parts In-Stock

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Corohmni

South Africa . 304 parts In-Stock

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Component Stockers USA

USA . 217,499 parts In-Stock

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Ampacity Inc.

Singapore . 42,377 parts In-Stock

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Continental Prestige Electronics

USA . 142,970 parts In-Stock

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Lixinc

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QUARKTWIN TECHNOLOGY LTD

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Eastek

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Perfect Parts

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

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Netroflash

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 579 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the NSBC114EPDP6T5G by Onsemi. Crafted with precision and expertise, this small signal bipolar junction transistor offers unparalleled performance and reliability. Whether you're looking to optimize switching applications or enhance circuit efficiency, this NPN and PNP transistor with built-in resistors has got you covered. With a maximum power dissipation of 0.408 W and a minimum DC current gain of 35, this versatile component operates at temperatures up to 150°C with a maximum collector-emitter voltage of 50 V. Elevate your projects with the quality and value that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and compatibility with different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and increases efficiency by reducing the number of external components required.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and reliable performance.

Maximum Power Dissipation (Abs): 0.408W

With a relatively high maximum power dissipation, this transistor can handle increased power levels without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for use in diverse environments and ensures reliable performance under varying conditions.

Maximum Collector-Emitter Voltage: 50V

The 50V maximum collector-emitter voltage rating ensures that the transistor can withstand high voltage applications.

Maximum Collector Current (IC): 0.1A

With a maximum collector current of 0.1A, this transistor is suitable for low to medium current applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC114EPDP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1.0

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC114EPDP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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