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NSBC113EPDXV6T5G

Onsemi

NSBC113EPDXV6T5G by Onsemi

NSBC113EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a max collector current of 0.1A. This transistor comes in a small outline package shape suitable for surface mount applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,335 parts In-Stock

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Vyrian

USA . 2,290 parts In-Stock

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SupplyDigital Components

Austria . 6,681 parts In-Stock

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Kulean Microsystems

USA . 5,046 parts In-Stock

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TANS Electronics

Latvia . 4,914 parts In-Stock

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Corphita

USA . 835 parts In-Stock

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Problanco Electronics

Mexico . 759 parts In-Stock

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UHIMA Technologies

Türkiye . 443 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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Overview

Boost your electronic circuits with the NSBC113EPDXV6T5G by Onsemi! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers seamless switching capabilities for a wide range of applications. With NPN and PNP configurations, this transistor boasts built-in resistors and a compact rectangular package design, making it ideal for space-constrained projects. Trust in Onsemi's reputation for quality and reliability to deliver optimal performance every time. Upgrade your circuits today with the NSBC113EPDXV6T5G and experience enhanced efficiency and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN AND PNP

Offers versatility and flexibility in circuit design as both NPN and PNP types are available in one package.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in switching circuits.

Surface Mount: YES

Suitable for surface mount applications, making it easy to integrate onto PCBs and saving space.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering onto PCBs, enhancing the overall assembly process.

Terminal Form: FLAT

Flat terminals ensure secure and stable connection, reducing the risk of contact issues in the circuit.

No. of Elements: 2

Having 2 elements in one package provides convenience and efficiency in circuit design.

No. of Terminals: 6

With 6 terminals, it offers flexibility in connectivity options for various circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, it can handle moderate power levels effectively.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact designs.

Minimum DC Current Gain (hFE): 3

Minimum DC current gain of 3 ensures proper amplification and signal control in the circuit.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, it can handle moderate voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor in various operating conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, it can handle moderate current levels in switching applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures reliable connections in the circuit.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and offers multiple connection options.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260 °C ensures reliable solder joints and robust assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC113EPDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC113EPDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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