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SSM2212RZ-RL

Analog Devices

SSM2212RZ-RL by Analog Devices

Analog Devices' SSM2212RZ-RL is a NPN BJT with 2 elements, built-in diode, and max VCEsat of 0.2V. Ideal for amplifier applications, it has hFE of 300, operates up to 150 °C, and handles IC up to 0.02A. With a transition frequency of 200MHz, this transistor is surface mountable in a small outline package.

Median Price

$5.286

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 7,500 parts In-Stock

1+ parts

-

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$5.286

7,500

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$5.286

Distributors (In-Stock)

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Digiode

USA . 145 parts In-Stock

1+ parts

$8.256

100+ parts

-

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145

$8.256

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Vyrian

USA . 3,792 parts In-Stock

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3,792

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 6,781 parts In-Stock

1+ parts

$0.546

100+ parts

-

1k+ parts

$0.508

10k+ parts

-

6,781

$0.546

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$0.508

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IDEA Electronic Components Group

UK . 1,305 parts In-Stock

1+ parts

$0.587

100+ parts

$0.558

1k+ parts

$0.558

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-

1,305

$0.587

$0.558

$0.558

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DigiPath Technology Company

USA . 947 parts In-Stock

1+ parts

$0.916

100+ parts

$0.879

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-

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947

$0.916

$0.879

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.116

100+ parts

$1.926

1k+ parts

$1.735

10k+ parts

-

2,000

$2.116

$1.926

$1.735

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Semicontronic

India . 3,213 parts In-Stock

1+ parts

$4.490

100+ parts

$4.378

1k+ parts

$4.355

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-

3,213

$4.490

$4.378

$4.355

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Corphita

USA . 116 parts In-Stock

1+ parts

$7.821

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116

$7.821

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Component Stockers USA

USA . 12,661 parts In-Stock

1+ parts

$8.780

100+ parts

$6.270

1k+ parts

$4.980

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-

12,661

$8.780

$6.270

$4.980

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Ampacity Inc.

Singapore . 3,212 parts In-Stock

1+ parts

$9.780

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3,212

$9.780

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Microchip USA

USA . 2,416 parts In-Stock

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2,416

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Overview

Discover the unmatched quality and reliability of Analog Devices with the SSM2212RZ-RL Small Signal Bipolar Junction Transistor. Ideal for amplifier applications, this NPN transistor boasts a low VCEsat of just 0.2V, ensuring efficient performance. With a small outline package style and dual terminal position, this transistor is versatile and easy to use in various projects. Trust Analog Devices to deliver cutting-edge technology that exceeds expectations, providing you with the value and benefits you need for your next design challenge.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having separate elements with a built-in diode allows for more flexibility in circuit design and can improve overall performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for amplifying signals accurately and efficiently.

Surface Mount: YES

Being surface mountable makes the installation process easier and more efficient, especially in compact electronic devices.

Maximum VCEsat: 0.2 V

Low VCEsat value indicates low saturation voltage, leading to reduced power loss and better efficiency in operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easier integration into circuit boards, saving space and providing a more streamlined design.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, reducing the risk of disconnection or failure in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2212RZ-RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

SSM2212RZ-RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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