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SSM2210P

Analog Devices

SSM2210P by Analog Devices

Analog Devices' SSM2210P is a NPN BJT with 2 elements, built-in diode, and hFE of 300. Ideal for amplifier applications, it has a max operating temp of 85°C, VCE of 40V, IC of 0.02A, and fT of 200MHz. Package: PLASTIC/EPOXY IN-LINE RECTANGULAR with TIN LEAD finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 3,105 parts In-Stock

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Digiode

USA . 501 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 20 parts In-Stock

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Electronics Depot

USA . 6 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Parana Technologies

USA . 12,361 parts In-Stock

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$1.774

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$1.649

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IDEA Electronic Components Group

UK . 1,577 parts In-Stock

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$1.907

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$1.812

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DigiPath Technology Company

USA . 1,662 parts In-Stock

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$2.975

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$2.856

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$2.975

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AZTECH Wire

Italy . 277 parts In-Stock

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$9.953

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One Stop Electronics

USA . 651 parts In-Stock

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$22.050

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$22.050

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Semicontronic

India . 1,240 parts In-Stock

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$61.050

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$59.524

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$59.218

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Corphita

USA . 247 parts In-Stock

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Kepictronics

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Overview

Elevate your electronic projects with the SSM2210P Small Signal Bipolar Junction Transistor by Analog Devices. Crafted with precision and quality, this NPN transistor boasts a configuration of separate elements with a built-in diode, making it perfect for amplifier applications. With a minimum DC current gain of 300 and a maximum operating temperature of 85°C, this transistor delivers reliable performance for your projects. Whether you're a hobbyist or a professional, the SSM2210P offers value, reliability, and versatility that will take your creations to the next level. Choose Analog Devices for superior quality and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes.

Minimum DC Current Gain (hFE): 300

Ensures stable and reliable amplification performance.

Maximum Collector-Emitter Voltage: 40 V

Allows for use in low to moderate voltage circuits.

Maximum Collector Current (IC): 0.02 A

Suitable for low power applications.

Nominal Transition Frequency (fT): 200 MHz

Enables high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2210P attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

MO-095AA

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2210P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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