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SSM2212CPZ-R7

Analog Devices

SSM2212CPZ-R7 by Analog Devices

Analog Devices' SSM2212CPZ-R7 is a NPN BJT with 200 min hFE, 40V VCEO, and 200MHz fT. Ideal for amplifier applications, it comes in a square chip carrier package with separate elements and built-in diode. This transistor operates at up to 150°C and supports a max collector current of 0.02A.

Median Price

$5.376

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$5.692

1,500

-

-

-

$5.692

Rochester

USA . 1,433 parts In-Stock

1+ parts

-

100+ parts

$5.060

1k+ parts

$4.530

10k+ parts

$4.260

1,433

-

$5.060

$4.530

$4.260

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 346 parts In-Stock

1+ parts

$4.883

100+ parts

-

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-

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346

$4.883

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-

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Vyrian

USA . 31 parts In-Stock

1+ parts

$5.045

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-

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31

$5.045

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Component Sense

UK . 4,775 parts In-Stock

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4,775

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,178 parts In-Stock

1+ parts

$0.683

100+ parts

-

1k+ parts

$0.635

10k+ parts

-

2,178

$0.683

-

$0.635

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IDEA Electronic Components Group

UK . 592 parts In-Stock

1+ parts

$0.734

100+ parts

$0.697

1k+ parts

$0.697

10k+ parts

-

592

$0.734

$0.697

$0.697

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Advanced Electronics

New Zealand . 550 parts In-Stock

1+ parts

$0.867

100+ parts

$0.789

1k+ parts

$0.711

10k+ parts

-

550

$0.867

$0.789

$0.711

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DigiPath Technology Company

USA . 2,296 parts In-Stock

1+ parts

$1.145

100+ parts

$1.099

1k+ parts

-

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2,296

$1.145

$1.099

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Semicontronic

India . 989 parts In-Stock

1+ parts

$4.370

100+ parts

$4.261

1k+ parts

$4.239

10k+ parts

-

989

$4.370

$4.261

$4.239

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Corphita

USA . 364 parts In-Stock

1+ parts

$4.626

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364

$4.626

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Microchip USA

USA . 9,075 parts In-Stock

1+ parts

$15.876

100+ parts

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9,075

$15.876

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Overview

Enhance your amplifier performance with the SSM2212CPZ-R7 Small Signal Bipolar Junction Transistor by Analog Devices. Manufactured with top-quality materials and advanced technology, this NPN transistor offers superior amplification capabilities for a wide range of applications. With its compact design, high DC current gain, and excellent temperature resistance, this chip carrier package ensures optimal performance and reliability. Trust Analog Devices to deliver cutting-edge solutions that meet your needs and exceed your expectations. Elevate your projects with the SSM2212CPZ-R7 and experience unmatched quality and value today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having built-in diodes allows for easier implementation and protection in certain circuit designs.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and facilitating automated assembly.

Minimum DC Current Gain (hFE): 200

With a minimum gain of 200, this transistor provides consistent and reliable amplification in circuits.

Maximum Collector-Emitter Voltage: 40 V

With a high voltage rating, this transistor can withstand higher voltages in circuits, enhancing its versatility.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency, this transistor is suitable for high-frequency applications, such as signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2212CPZ-R7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

2

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2212CPZ-R7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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