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SSM2220PZ

Analog Devices

SSM2220PZ by Analog Devices

SSM2220PZ by Analog Devices is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. It has a min hFE of 80, max operating temp of 150 °C, and max VCE of 36V. The transistor's package style is in-line with through-hole terminals and a transition frequency of 190MHz.

Median Price

$5.140

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9 parts In-Stock

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-

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$5.140

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$4.600

10k+ parts

$4.330

9

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$5.140

$4.600

$4.330

Distributors (In-Stock)

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Vyrian

USA . 8,983 parts In-Stock

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Digiode

USA . 57 parts In-Stock

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57

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Parana Technologies

USA . 21,790 parts In-Stock

1+ parts

$1.468

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-

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$1.366

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21,790

$1.468

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$1.366

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IDEA Electronic Components Group

UK . 192 parts In-Stock

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$1.579

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-

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$1.500

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192

$1.579

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$1.500

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DigiPath Technology Company

USA . 915 parts In-Stock

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$2.463

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$2.365

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-

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915

$2.463

$2.365

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Semicontronic

India . 927 parts In-Stock

1+ parts

$15.050

100+ parts

$14.674

1k+ parts

$14.598

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927

$15.050

$14.674

$14.598

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AZTECH Wire

Italy . 237 parts In-Stock

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$17.807

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One Stop Electronics

USA . 993 parts In-Stock

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$32.050

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993

$32.050

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Ampacity Inc.

Singapore . 505 parts In-Stock

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$35.050

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$35.050

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A-Z Elektronik GmbH

Germany . 1,139 parts In-Stock

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Perfect Parts

USA . 699 parts In-Stock

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699

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Corphita

USA . 351 parts In-Stock

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Overview

Elevate your amplifier designs with the SSM2220PZ by Analog Devices. As a leader in small signal bipolar junction transistors, Analog Devices delivers unmatched quality and reliability in every component. The SSM2220PZ offers customers a versatile solution for amplification needs, featuring a separate, 2-element design with a built-in diode for added convenience. With a maximum collector-emitter voltage of 36V and a nominal transition frequency of 190 MHz, this transistor provides exceptional performance for a wide range of applications. Trust Analog Devices to elevate your projects with cutting-edge technology and superior value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity type allows for easy integration into circuits and can be used in amplifiers, making it versatile for different electronic designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with 2 elements and built-in diode offers flexibility in circuit design and allows for more functionality within a small package.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor is optimized for signal amplification, providing reliable performance in audio or other signal processing circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, optimizing space utilization and making it convenient for assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the soldering process during PCB assembly, ensuring a secure and reliable connection for the transistor.

No. of Elements: 2

Having 2 elements provides increased functionality and versatility in circuit design, allowing for more complex applications and configurations.

No. of Terminals: 8

With 8 terminals, this transistor offers ample connection points for various circuit configurations, making it suitable for a wide range of applications.

Package Style (Meter): IN-LINE

The in-line package style allows for easy integration and compact placement on PCBs, optimizing space utilization and enabling neat and organized circuit layouts.

Minimum DC Current Gain (hFE): 80

The minimum DC current gain of 80 ensures reliable and consistent amplification performance, making this transistor suitable for high-quality signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments and offers reliable operation under varying conditions.

Maximum Collector-Emitter Voltage: 36 V

The maximum collector-emitter voltage of 36V provides a high voltage tolerance, making the transistor suitable for applications requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures stability and reliability in performance, making it a durable and long-lasting choice for electronic circuits.

Maximum Collector Current (IC): 0.02 A

The maximum collector current of 0.02A allows for efficient power handling capabilities, making this transistor suitable for applications requiring moderate current levels.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a secure and reliable connection for the transistor in various operating conditions.

Terminal Position: DUAL

The dual terminal position allows for flexible connection options in circuit design, enabling customization and ease of integration in different electronic setups.

Nominal Transition Frequency (fT): 190 MHz

The nominal transition frequency of 190 MHz indicates high-speed performance, making this transistor suitable for applications requiring fast switching and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2220PZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2220PZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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