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SSM2220SZ

Analog Devices

SSM2220SZ by Analog Devices

Analog Devices' SSM2220SZ is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. With a max operating temp of 150 °C, it offers hFE of 80 and VCE of 36V. This surface-mount transistor has a transition frequency of 190MHz in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,432 parts In-Stock

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7,432

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Digiode

USA . 217 parts In-Stock

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217

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Distributors (Availability)

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Parana Technologies

USA . 456 parts In-Stock

1+ parts

$0.957

100+ parts

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$0.890

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456

$0.957

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$0.890

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IDEA Electronic Components Group

UK . 1,548 parts In-Stock

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$1.029

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$0.978

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1,548

$1.029

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DigiPath Technology Company

USA . 1,648 parts In-Stock

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$1.605

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$1.541

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1,648

$1.605

$1.541

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$2.283

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$2.078

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$1.872

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600

$2.283

$2.078

$1.872

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One Stop Electronics

USA . 1,431 parts In-Stock

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$5.050

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1,431

$5.050

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AZTECH Wire

Italy . 385 parts In-Stock

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$11.881

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385

$11.881

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Ampacity Inc.

Singapore . 937 parts In-Stock

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$18.050

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937

$18.050

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Semicontronic

India . 1,101 parts In-Stock

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$33.050

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$32.224

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$32.058

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1,101

$33.050

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$32.058

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Perfect Parts

USA . 2,569 parts In-Stock

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2,569

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Corphita

USA . 695 parts In-Stock

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695

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Overview

Upgrade your amplification game with the SSM2220SZ by Analog Devices. Manufactured with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability. Perfect for amplifier applications, this PNP transistor with built-in diode comes in a convenient rectangular package shape. With a high DC current gain of 80 and a maximum collector current of 0.02 A, this transistor ensures optimal performance and efficiency. Trust Analog Devices to deliver top-notch products that exceed expectations. Experience the difference with the SSM2220SZ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers versatility in circuit design with separate elements and built-in diode functionality.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Simplifies PCB assembly process and saves space, making it suitable for compact designs.

Package Shape: RECTANGULAR

Allows for easy integration into circuit layouts and provides a standardized form factor.

No. of Elements: 2

Provides dual transistor elements in one package, increasing functionality and design options.

No. of Terminals: 8

Offers multiple connection points for flexible circuit configurations and connections.

Minimum DC Current Gain (hFE): 80

Ensures consistent and reliable amplification performance with a high minimum gain value.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 36 V

Provides a high voltage rating for reliable operation in various circuit environments.

Transistor Element Material: SILICON

Utilizes silicon material for improved performance, reliability, and efficiency.

Maximum Collector Current (IC): 0.02 A

Capable of handling moderate current levels, suitable for low-power applications.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant finish for secure terminal connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connections.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during the manufacturing process, ensuring proper soldering.

Nominal Transition Frequency (fT): 190 MHz

Offers high transition frequency for fast switching applications, ensuring efficient operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2220SZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2220SZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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