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SSM2220SZ-REEL

Analog Devices

SSM2220SZ-REEL by Analog Devices

Analog Devices' SSM2220SZ-REEL is a PNP BJT with 2 elements, built-in diode, and hFE of 80. Ideal for amplifier applications, it operates up to 150°C with VCE max of 36V. This surface-mount transistor has a package style of SOIC-8 and fT of 190MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,243 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Digiode

USA . 503 parts In-Stock

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503

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Corohmni

South Africa . 1,076 parts In-Stock

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$0.418

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$0.418

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Parana Technologies

USA . 15,334 parts In-Stock

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$1.612

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$1.499

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$1.612

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$1.499

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IDEA Electronic Components Group

UK . 854 parts In-Stock

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$1.733

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$1.646

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854

$1.733

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$1.646

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Aztec Data Supply Inc.

USA . 215 parts In-Stock

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$1.760

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215

$1.760

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One Stop Electronics

USA . 974 parts In-Stock

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$2.050

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974

$2.050

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DigiPath Technology Company

USA . 1,508 parts In-Stock

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$2.703

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$2.595

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$2.703

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AZTECH Wire

Italy . 331 parts In-Stock

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$10.574

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331

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Semicontronic

India . 1,148 parts In-Stock

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$26.050

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$25.399

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$25.268

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Ampacity Inc.

Singapore . 688 parts In-Stock

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$47.050

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Continental Prestige Electronics

USA . 4,527 parts In-Stock

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Argo Parts USA

USA . 2,710 parts In-Stock

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Corphita

USA . 842 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Experience superior performance and reliability with the SSM2220SZ-REEL by Analog Devices. As a leading manufacturer in the industry, Analog Devices delivers high-quality small signal bipolar junction transistors that are perfect for amplifier applications. With a compact design and built-in diode, this PNP transistor offers exceptional value and efficiency. Trust Analog Devices to provide cutting-edge technology that meets your needs and exceeds your expectations. Choose the SSM2220SZ-REEL for unparalleled performance in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and light-weight material, which makes the transistor suitable for various applications while ensuring reliability.

Polarity or Channel Type: PNP

Allows for current to flow from emitter to collector when a positive voltage is applied to the base, offering versatility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Comes with built-in diodes, providing additional functionality and versatility in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring efficient signal processing.

Surface Mount: YES

Suitable for automated assembly processes, making it ideal for high-volume manufacturing.

Package Shape: RECTANGULAR

Easily mountable on circuit boards, allowing for efficient use of space in electronic devices.

Minimum DC Current Gain (hFE): 80

High gain value ensures amplification of weak signals with minimal distortion, making it suitable for audio applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stable performance in harsh operating conditions.

Maximum Collector-Emitter Voltage: 36 V

Supports a relatively high voltage, making it suitable for different circuit configurations.

Transistor Element Material: SILICON

Silicon material ensures high reliability and efficiency of the transistor.

Maximum Collector Current (IC): 0.02 A

Supports a moderate current level, suitable for low-power applications.

Terminal Finish: MATTE TIN

Provides good solderability and conductivity, ensuring reliable connections.

Nominal Transition Frequency (fT): 190 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2220SZ-REEL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2220SZ-REEL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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