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SSM2212

Analog Devices

SSM2212 by Analog Devices

Analog Devices' SSM2212 is a NPN BJT with 2 elements & built-in diode, ideal for amplifier applications. Features include hFE of 300, VCE of 40V, and fT of 200MHz. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,414 parts In-Stock

1+ parts

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6,414

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Digiode

USA . 908 parts In-Stock

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908

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 7,814 parts In-Stock

1+ parts

$0.521

100+ parts

-

1k+ parts

$0.484

10k+ parts

-

7,814

$0.521

-

$0.484

-

IDEA Electronic Components Group

UK . 1,809 parts In-Stock

1+ parts

$0.560

100+ parts

$0.532

1k+ parts

$0.532

10k+ parts

-

1,809

$0.560

$0.532

$0.532

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DigiPath Technology Company

USA . 1,979 parts In-Stock

1+ parts

$0.874

100+ parts

$0.839

1k+ parts

-

10k+ parts

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1,979

$0.874

$0.839

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AZTECH Wire

Italy . 548 parts In-Stock

1+ parts

$6.845

100+ parts

-

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548

$6.845

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Semicontronic

India . 1,515 parts In-Stock

1+ parts

$8.050

100+ parts

$7.849

1k+ parts

$7.808

10k+ parts

-

1,515

$8.050

$7.849

$7.808

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One Stop Electronics

USA . 1,288 parts In-Stock

1+ parts

$36.050

100+ parts

-

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1,288

$36.050

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Ampacity Inc.

Singapore . 1,056 parts In-Stock

1+ parts

$65.050

100+ parts

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1,056

$65.050

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Corphita

USA . 47 parts In-Stock

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47

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Overview

Unleash the power of innovation with the SSM2212 by Analog Devices, a top-tier manufacturer known for superior quality and reliability. As a Small Signal Bipolar Junction Transistor (BJT) with NPN polarity and a configuration of two separate elements with a built-in diode, this amplifier is perfect for a range of applications. With a small outline package style and gull wing terminals, the SSM2212 offers customers value, efficiency, and ease of use. Experience optimal performance and maximize your projects with the SSM2212 from Analog Devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, ensuring compatibility with standard electronic designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers versatility in circuit design with separate elements and a built-in diode for added functionality.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, providing reliable and efficient performance.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Facilitates efficient PCB layout and space utilization in electronic devices.

Terminal Form: GULL WING

Enables easy soldering and secure connection to the PCB, ensuring reliable electrical contact.

No. of Elements: 2

Provides flexibility in circuit design and allows for enhanced functionality.

No. of Terminals: 8

Offers multiple connection points for various circuit configurations and applications.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications, ensuring versatility in product design.

Minimum DC Current Gain (hFE): 300

High gain value ensures reliable amplification performance in various electronic circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring voltage regulation and control.

Transistor Element Material: SILICON

Provides high conductivity and temperature stability, ensuring long-term reliability.

Maximum Collector Current (IC): 0.02 A

Able to handle moderate current levels for various electronic applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and layout.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables fast switching speed and high-frequency operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2212 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2212 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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