Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Analog Devices' SSM2210SZ is a NPN BJT with 2 elements, built-in diode, hFE of 300. Ideal for amplifier applications, it operates up to 85 °C, with VCE max of 40V and IC max of 0.02A. Package: Small Outline, Surface Mount, Gull Wing terminals.
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The plastic/epoxy material used for the package body provides durability and protection for the transistor, making it suitable for various applications.
The NPN configuration allows for easy integration into circuits and enhances performance in amplifier applications.
The separate configuration with 2 elements and built-in diode provides versatility and allows for efficient use in amplifier circuits.
Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification tasks.
Being surface mountable makes installation and integration of the transistor easy and efficient, especially in compact electronic devices.
The rectangular package shape allows for space-saving and efficient placement on circuit boards.
Having 2 elements enhances performance and functionality, making the transistor suitable for various circuit requirements.
With 8 terminals, the transistor offers flexibility in circuit connections and configurations, allowing for versatile applications.
The small outline package style saves space on circuit boards and is suitable for compact electronic devices.
A high minimum DC current gain ensures stable and reliable amplification performance in the transistor.
With a maximum operating temperature of 85 °C, the transistor can withstand high-temperature environments, ensuring durability and performance.
The high maximum collector-emitter voltage rating allows for safe operation in various voltage conditions.
Utilizing silicon as the transistor element material ensures reliability, stability, and efficient performance in electronic circuits.
The maximum collector current rating of 0.02 A allows for efficient current handling and performance in amplifier applications.
The matte tin terminal finish provides corrosion resistance and ensures secure connections in the circuit.
The dual terminal position offers flexibility in circuit connections and allows for versatile applications in various circuit configurations.
With a peak reflow temperature of 260 °C, the transistor can withstand high-temperature soldering processes, ensuring reliable assembly and performance.
The nominal transition frequency of 200 MHz indicates fast switching speeds and efficient high-frequency performance in amplifier applications.
Small Signal Bipolar Junction Transistors (BJT) SSM2210SZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
SSM2210SZ Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.
CEO
Vincent Roche
Interim CFO
James Mollica
CAO
Michael Sondel
Limerick Fab
Fabrication
Fab Initiation
1977
Ireland
Limerick
Wafer Capacity
30,000
Hillview Fab
2001
USA
Milpitas
15,000
Wilmington Fab
1967
Wilmington
50,000
Camas Fab
1997
Camas
18,000
Beaverton-Portland
1987
Beaverton
14,000
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
2N7002
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
1N4148WS
Synsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Panjit International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM2931AZ-5.0RAG
Onsemi
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
LM358MX
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148
Diotec Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS14
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
SBAV99LT1G
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
FDN5618P
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
FDC5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
FT232RL-REEL
FTDI
FTDI's FT232RL-REEL is a bus controller with 28 terminals, operating at 3.3V to 5.25V. It supports USB, VBUS, and UART buses with a data transfer rate of 60MBps. Ideal for industrial applications due to its CMOS technology and compatibility with RS232, RS422, and RS485 standards.
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS84-7-F
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
LM2931AZ-5.0G
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
MMBT2907ALT3G
MMBT2907ALT3G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package and can handle up to 0.6A of collector current. The device operates at temperatures up to 150°C and features a turn-on time of 45ns.
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BC547C
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
FMMT493TA
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 100 V;
JANTX2N2222AUA
Microchip Technology
JANTX2N2222AUA by Microchip is a NPN BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 0.5W, hFE of 30, and can handle up to 0.8A collector current. With a max operating temp of 200°C and fT of 250MHz, it meets MIL-19500/255 standards for high-performance electronics.
BC846B
Micro Commercial Components
Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
SBC817-40LT1G
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC817-40
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT2222A
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .325 W; Maximum Collector Current (IC): .001 A;
BC547CT&A
Continental Device India
BC547CT&A by Continental Device India is a NPN BJT transistor with hFE of 420, IC of 0.1A, and fT of 300MHz. It is used for switching applications in circuits requiring a max VCE of 45V and Pd of 0.625W. The package style is cylindrical with matte tin finish suitable for through-hole mounting.
BC846BPDW1T1G
BC846BPDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types. It has a max VCEsat of 0.65V, hFE of 200, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and dual terminal position for surface mount assembly.
SBC846BWT1G
The Onsemi SBC846BWT1G is a NPN BJT with max power dissipation of 0.15W, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its single configuration, surface mount capability, and max collector current of 0.1A.
2N2905A
New England Semiconductor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2222AUB
Silicon Transistor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846B-7-F
Diodes Inc. BC846B-7-F is a NPN BJT transistor with hFE of 200, VCE of 65V, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates b/w -65 to 150°C, meeting AEC-Q101 standards for automotive use.
BC817-40,235
NXP Semiconductors
NXP Semiconductors' BC817-40,235 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.
MMBT2907A
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .8 A;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
BC858B,215
BC858B,215 by NXP Semiconductors is a PNP BJT for switching applications. With VCEsat of 0.65V and hFE of 220, it operates at max 150°C with IC of 0.1A. Its small outline package makes it suitable for surface mount designs.
SMBT2222AE6327HTSA1
Infineon Technologies
SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.
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ADN4693E-1BCPZ
Analog Devices
ADN4693E-1BCPZ by Analog Devices is a Line Driver & Receiver with 16 terminals, operating at 3.3V nominal voltage. It features a max transmit delay of 2.4ns and differential output for EIA/TIA-899 interface standard applications in industrial settings.
AD3542RBCPZ16-RL7
AD3542RBCPZ16-RL7 by Analog Devices is a 16-bit D/A converter with max analog output voltage of 7.5V, 0.006103% linearity error, and 0.1us settling time. Ideal for applications requiring precise analog signal generation in temperature-sensitive environments.
ADPA7005CHIP
ADPA7005CHIP by Analog Devices is a wide band medium power RF amplifier with 11.5 dB gain, operating from 20-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -55 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
ADMV8420ACPZ
Analog Devices' ADMV8420ACPZ is a 24-terminal BAND PASS FILTER with a Center Frequency of 15500 MHz and Input Impedance of 50Ω. Operating b/w -40°C to 85°C, it's ideal for applications requiring precise filtering in electronic systems.
ADPA7005AEHZ-R7
ADPA7005AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 12 dB gain, operating from 18-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.
ADPA7005AEHZ
ADPA7005AEHZ by Analog Devices is a wide band medium power RF amplifier with 12 dB gain. It operates b/w 18-44 GHz, handling up to 27 dBm CW input power. Ideal for applications requiring high frequency amplification in temperatures ranging from -40 to 85°C.
ADMV8420ACPZ-R5
ADMV8420ACPZ-R5 by Analog Devices is a 24-terminal BAND PASS FILTER with a Center Frequency of 15500 MHz and Input Impedance of 50 OHM. It operates b/w -40 to 85 °C and is ideal for applications requiring precise frequency filtering in electronic circuits.
ADN4693E-1BCPZ-RL7
ADN4693E-1BCPZ-RL7 by Analog Devices is a Line Driver & Receiver with 16 terminals, operating at 3.3V. It offers a max transmit delay of 2.4ns and max supply current of 24mA. Ideal for applications requiring differential output and EIA/TIA interface standards compliance in tight spaces due to its very thin profile chip carrier package style.
ADAQ23876BBCZ
Analog Devices' ADAQ23876BBCZ is a 16-bit ADC with 0.00125% EL, 15 MHz sample rate, and 2'S COMPLEMENT BINARY output. Ideal for wireless data acquisition applications due to its compact GRID ARRAY package and fast 0.063 us conversion time. Operating from -40 to 85 °C, it offers precise analog-to-digital conversion in a small form factor.
AD3542RBCPZ16
AD3542RBCPZ16 by Analog Devices is a 16-bit D/A converter with max analog output voltage of 7.5V and linearity error of 0.006103%. It features a nominal settling time of 0.1us, making it ideal for applications requiring precise analog signal generation in temperature-sensitive environments. With a compact square package shape and surface mount capability, this chip carrier is suitable for space-constrained designs where high performance is essential.
SSM2212RZ
SSM2212RZ by Analog Devices is a small signal NPN bipolar junction transistor (BJT) with a max VCEsat of 0.2V and a min DC current gain (hFE) of 300. It is commonly used as an amplifier in various applications due to its high transition frequency of 200MHz.
SSM2212RZ-R7
Analog Devices' SSM2212RZ-R7 is a NPN BJT transistor with 2 elements and built-in diode, ideal for amplifier applications. With a VCEsat of 0.2V, hFE of 300, and fT of 200MHz, it operates at up to 150°C with a max VCE of 40V and IC of 0.02A. Suitable for surface mount assembly in small outline packages.
SSM2220SZ-REEL
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .02 A; Minimum DC Current Gain (hFE): 80;
SSM2210P
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Qualification: Not Qualified;
SSM2210PZ
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Package Style (Meter): IN-LINE;
SSM2210S
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; JEDEC-95 Code: MS-012AA;
SSM2210S-REEL
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Package Style (Meter): SMALL OUTLINE;
SSM2210SZ-REEL
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Maximum Collector-Emitter Voltage: 40 V;
SSM2212
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; No. of Elements: 2;
SSM2212CPZ-R7
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; JESD-30 Code: S-PQCC-N16;
SSM2212CPZ-RL
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Package Style (Meter): CHIP CARRIER;
SSM2212RZ-RL
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Transistor Application: AMPLIFIER;
SSM2220P
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .02 A; Terminal Position: DUAL;
SSM2220PZ
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .02 A; No. of Elements: 2;
SSM2220S
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .02 A; Maximum Collector-Emitter Voltage: 36 V;
SSM2220S-REEL
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .02 A; Terminal Form: GULL WING;
SSM2220SZ
Precision Monolithics
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .02 A; Qualification: Not Qualified;
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