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SSM2220P

Analog Devices

SSM2220P by Analog Devices

Analog Devices' SSM2220P is a PNP BJT with 2 elements & built-in diode, ideal for amplifier applications. Features include hFE of 80, VCE max of 36V, IC max of 0.02A, and fT of 190MHz. Package: PLASTIC/EPOXY, RECTANGULAR shape with 8 terminals in IN-LINE style.

Median Price

$5.260

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,805 parts In-Stock

1+ parts

-

100+ parts

$5.260

1k+ parts

$4.710

10k+ parts

$4.430

1,805

-

$5.260

$4.710

$4.430

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 465 parts In-Stock

1+ parts

$5.567

100+ parts

-

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-

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465

$5.567

-

-

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Vyrian

USA . 256 parts In-Stock

1+ parts

$5.860

100+ parts

-

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256

$5.860

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-

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Electronics Depot

USA . 3 parts In-Stock

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3

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Huijzer Components

Netherlands . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 16,322 parts In-Stock

1+ parts

$0.616

100+ parts

-

1k+ parts

$0.573

10k+ parts

-

16,322

$0.616

-

$0.573

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IDEA Electronic Components Group

UK . 1,340 parts In-Stock

1+ parts

$0.662

100+ parts

$0.629

1k+ parts

$0.629

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-

1,340

$0.662

$0.629

$0.629

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DigiPath Technology Company

USA . 1,470 parts In-Stock

1+ parts

$1.033

100+ parts

$0.991

1k+ parts

-

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-

1,470

$1.033

$0.991

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Semicontronic

India . 1,478 parts In-Stock

1+ parts

$4.980

100+ parts

$4.856

1k+ parts

$4.831

10k+ parts

-

1,478

$4.980

$4.856

$4.831

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Corphita

USA . 835 parts In-Stock

1+ parts

$5.274

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835

$5.274

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QUARKTWIN TECHNOLOGY LTD

USA . 16,010 parts In-Stock

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16,010

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Microchip USA

USA . 5,373 parts In-Stock

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5,373

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Assy Fe

Spain . 49 parts In-Stock

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49

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Overview

Unlock the power of high-quality sound amplification with the Analog Devices SSM2220P Small Signal Bipolar Junction Transistor. Manufactured by a trusted industry leader, this PNP transistor offers exceptional performance and reliability. Ideal for amplifier applications, this versatile component features two elements with built-in diodes for seamless integration. With a maximum operating temperature of 85°C and a transition frequency of 190 MHz, this transistor delivers unparalleled value and benefits to customers seeking top-notch audio solutions. Amplify your projects with the SSM2220P and experience superior sound quality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high durability and resistance to heat, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

Ideal for applications requiring PNP transistors, offering flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile circuit configurations and added functionality with the built-in diode.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: RECTANGULAR

Space-efficient design that facilitates easy integration into circuits and PCB layouts.

Minimum DC Current Gain (hFE): 80

Provides high current gain, ensuring efficient amplification of input signals.

Maximum Collector-Emitter Voltage: 36 V

Supports high voltage applications while maintaining stable performance and reliability.

Maximum Collector Current (IC): 0.02 A

Capable of handling moderate collector currents, suitable for various small signal applications.

Nominal Transition Frequency (fT): 190 MHz

Offers high frequency response, making the transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2220P attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2220P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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