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SSM2220S

Analog Devices

SSM2220S by Analog Devices

Analog Devices' SSM2220S is a PNP BJT with 2 elements, built-in diode, and hFE of 80. Ideal for amplifier applications, it has a max operating temp of 150°C, VCEO of 36V, IC of 0.02A, and fT of 190MHz. This small outline transistor comes in a plastic/epoxy package with Gull Wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,660 parts In-Stock

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Digiode

USA . 425 parts In-Stock

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425

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.727

100+ parts

$0.662

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$0.596

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2,000

$0.727

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$0.596

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Parana Technologies

USA . 21,828 parts In-Stock

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$1.408

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$1.309

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$1.408

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$1.309

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IDEA Electronic Components Group

UK . 2,053 parts In-Stock

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$1.514

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$1.438

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DigiPath Technology Company

USA . 1,754 parts In-Stock

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$2.362

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$2.267

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$2.362

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AZTECH Wire

Italy . 502 parts In-Stock

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$11.880

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One Stop Electronics

USA . 288 parts In-Stock

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$26.050

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288

$26.050

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Semicontronic

India . 1,430 parts In-Stock

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$35.050

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$34.174

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$33.998

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Component Stockers USA

USA . 357 parts In-Stock

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$99.990

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Kepictronics

USA . 600 parts In-Stock

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Microchip USA

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Corphita

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Overview

Upgrade your electronic projects with the Analog Devices SSM2220S Small Signal Bipolar Junction Transistor. With a reputation for excellence, Analog Devices delivers top-quality components like this PNP transistor with built-in diode elements. Perfect for amplifier applications, this transistor offers a seamless surface mount installation and high-performance characteristics. Experience the reliability and efficiency of the SSM2220S and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile use in different circuit configurations, enhancing functionality.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving time and effort.

Package Shape: RECTANGULAR

Facilitates efficient placement on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Allows for secure solder connections, reducing the risk of disconnection or malfunction.

Minimum DC Current Gain (hFE): 80

Ensures reliable amplification with a high gain value, providing consistent output performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 36 V

Can handle relatively high voltage levels, making it suitable for various circuit designs.

Transistor Element Material: SILICON

Offers excellent performance characteristics and reliability compared to other materials.

Maximum Collector Current (IC): 0.02 A

Suitable for low to medium current applications, ensuring proper functionality in various circuits.

Terminal Finish: TIN LEAD

Provides a reliable and secure terminal connection, enhancing the overall durability of the transistor.

Terminal Position: DUAL

Allows for easy and flexible connection to circuit boards, accommodating different layout configurations.

Peak Reflow Temperature °C: 240

Withstands high-temperature reflow processes during assembly, ensuring stable performance post-installation.

Nominal Transition Frequency (fT): 190 MHz

Offers high-frequency operation, suitable for applications requiring fast switching or amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2220S attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2220S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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