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SSM2212RZ

Analog Devices

SSM2212RZ by Analog Devices

SSM2212RZ by Analog Devices is a small signal NPN bipolar junction transistor (BJT) with a max VCEsat of 0.2V and a min DC current gain (hFE) of 300. It is commonly used as an amplifier in various applications due to its high transition frequency of 200MHz.

Median Price

$8.441

Lifecycle Status

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Chip1Stop

Japan . 184 parts In-Stock

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$8.170

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$5.020

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$5.020

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Arrow

USA . 39 parts In-Stock

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$8.441

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$5.557

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$5.224

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$8.441

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$5.224

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Farnell

UK . 60 parts In-Stock

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$9.370

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$6.100

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$5.440

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60

$9.370

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$5.440

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Element14

Singapore . 60 parts In-Stock

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$15.930

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$8.190

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$7.340

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$15.930

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Verical

USA . 39 parts In-Stock

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Rochester

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$4.530

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$4.260

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Distributors (In-Stock)

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Digiode

USA . 501 parts In-Stock

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$4.883

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Nova Conductors

Japan . 44 parts In-Stock

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$5.550

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Vyrian

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Chip Stock

USA . 2,910 parts In-Stock

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Semtec, LLC

USA . 234 parts In-Stock

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ComSIT Distribution GmbH

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Prism Electronics

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Andel Nordic

Denmark . 649 parts In-Stock

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$0.110

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$0.074

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$0.074

649

$0.110

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$0.074

$0.074

Corohmni

South Africa . 682 parts In-Stock

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$0.523

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Parana Technologies

USA . 23,650 parts In-Stock

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$0.897

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$0.834

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$0.897

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$0.834

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IDEA Electronic Components Group

UK . 1,486 parts In-Stock

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$0.964

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$0.916

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Aztec Data Supply Inc.

USA . 2,110 parts In-Stock

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$1.280

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DigiPath Technology Company

USA . 1,947 parts In-Stock

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$1.504

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$1.444

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Ampacity Inc.

Singapore . 222 parts In-Stock

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$3.920

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Corphita

USA . 383 parts In-Stock

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$4.626

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$4.626

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Continental Prestige Electronics

USA . 616 parts In-Stock

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$7.830

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$5.860

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$4.440

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$7.830

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Semicontronic

India . 61 parts In-Stock

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$8.530

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$8.317

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$8.274

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Microchip USA

USA . 229 parts In-Stock

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$26.124

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QUARKTWIN TECHNOLOGY LTD

USA . 21,650 parts In-Stock

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Lixinc

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Perfect Parts

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Argo Parts USA

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Overview

Looking to amplify your audio signals with precision and reliability? Look no further than the SSM2212RZ by Analog Devices. As a leading manufacturer in the industry, Analog Devices is known for their exceptional quality and innovative solutions. The SSM2212RZ is a small signal bipolar junction transistor (BJT) with a NPN polarity and separate configuration. Its built-in diode offers added convenience and flexibility. With applications in amplifiers, this surface-mount transistor delivers outstanding performance, thanks to its maximum VCEsat of only 0.2V and minimum DC current gain (hFE) of 300. Designed with a rectangular package shape and gull wing terminal form, this transistor is easy to integrate into your circuit design. Trust Analog Devices and the SSM2212RZ to provide the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY -

This material choice ensures durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN -

The NPN configuration allows for easy integration and compatibility with other components in electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE -

The separate configuration with built-in diode offers enhanced functionality and flexibility for specific circuit requirements.

Transistor Application: AMPLIFIER -

Designed specifically for amplification purposes, this transistor is an excellent choice for audio and signal amplification systems.

Surface Mount: YES -

With the surface mount capability, this transistor can be easily mounted on printed circuit boards, saving valuable space and facilitating production processes.

Maximum VCEsat: 0.2 V -

The low VCEsat value ensures minimal voltage drop across the transistor, resulting in efficient power consumption and improved performance.

Package Shape: RECTANGULAR -

The rectangular shape provides a standardized form factor, enabling easy integration with existing electronic designs and applications.

Terminal Form: GULL WING -

The gull wing terminal form allows for secure and reliable connections, ensuring proper electrical contact and reducing the risk of signal loss.

No. of Elements: 2 -

With two elements, this transistor offers increased versatility and the potential for more complex circuit configurations.

No. of Terminals: 8 -

The eight terminals provide ample connectivity options, facilitating connections to various components within a circuit design.

Package Style (Meter): SMALL OUTLINE -

The small outline package style allows for compact integration and efficient use of board space, ideal for miniaturization and compact electronic devices.

Minimum DC Current Gain (hFE): 300 -

The high minimum DC current gain ensures reliable and consistent amplification performance, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C -

With a high maximum operating temperature, this transistor can withstand harsh environments and extreme temperature conditions.

Maximum Collector-Emitter Voltage: 40 V -

The high maximum collector-emitter voltage allows for greater flexibility in circuit design and handling higher voltage applications.

Transistor Element Material: SILICON -

The use of silicon as the transistor element material ensures stable and reliable performance in various operating conditions.

Maximum Collector Current (IC): 0.02 A -

The maximum collector current rating showcases the transistor's ability to handle moderate power levels, making it suitable for a wide range of applications.

Terminal Finish: Matte Tin (Sn) - annealed -

The matte tin finish provides excellent solderability, while the annealed treatment improves durability and long-term reliability.

Terminal Position: DUAL -

Dual terminal positions allow for flexible placement options, accommodating different circuit layouts and assembly configurations.

Moisture Sensitivity Level (MSL): 1 -

The moisture sensitivity level of 1 indicates that this transistor is suitable for standard soldering processes and has a low risk of moisture-related damage during manufacturing.

Maximum Time At Peak Reflow Temperature (s): 30 -

The maximum time at peak reflow temperature specification ensures that the transistor can withstand the required soldering processes without degradation.

Peak Reflow Temperature °C: 260 -

The peak reflow temperature value indicates the maximum temperature at which the transistor can be soldered, ensuring compatibility with industry-standard assembly processes.

Nominal Transition Frequency (fT): 200 MHz -

The high nominal transition frequency reflects the transistor's ability to handle high-frequency signals accurately, making it suitable for applications requiring fast switching and communication protocols.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2212RZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.2 V

Trade Compliance

SSM2212RZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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