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SSM2210SZ-REEL

Analog Devices

SSM2210SZ-REEL by Analog Devices

Analog Devices' SSM2210SZ-REEL is a NPN BJT with 2 elements, built-in diode, and hFE of 300. Ideal for amplifier applications, it has a max operating temp of 85 °C, VCE of 40V, IC of 0.02A, and fT of 200MHz. This small outline transistor features Gull Wing terminals in an 8-terminal package.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 4,647 parts In-Stock

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Digiode

USA . 654 parts In-Stock

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NexGen Digital

USA . 20 parts In-Stock

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Sea View Technologies

USA . 3 parts In-Stock

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Bristol Electronics

USA . 3 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 90 parts In-Stock

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$1.069

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$0.994

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90

$1.069

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$0.994

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IDEA Electronic Components Group

UK . 1,996 parts In-Stock

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$1.149

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$1.092

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$1.149

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DigiPath Technology Company

USA . 319 parts In-Stock

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$1.792

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$1.721

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319

$1.792

$1.721

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AZTECH Wire

Italy . 847 parts In-Stock

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$6.442

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Semicontronic

India . 631 parts In-Stock

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$19.050

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$18.574

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$18.478

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631

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One Stop Electronics

USA . 1,158 parts In-Stock

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$29.050

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

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ChipstoGo Electronic ltd

UK . 38 parts In-Stock

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Overview

Elevate your electronic designs with the SSM2210SZ-REEL from Analog Devices, a powerhouse in small signal bipolar junction transistors. With a sleek package body material of PLASTIC/EPOXY and NPN polarity, this transistor offers high-quality performance and reliability for amplifier applications. Featuring a compact rectangular shape and gull wing terminals, this device is surface mountable and easy to integrate into your projects. Boasting a minimum DC current gain of 300 and a maximum operating temperature of 85 °C, the SSM2210SZ-REEL provides exceptional value, enhanced functionality, and superior quality for all your circuit needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits and offers good performance for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Allows for versatile circuit design and can be used for various amplifier configurations.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Facilitates easy and efficient circuit board assembly, especially for modern compact electronic devices.

Package Shape: RECTANGULAR

Offers a compact design for space-efficient circuit layout and integration.

Minimum DC Current Gain (hFE): 300

Provides high amplification capability, ensuring efficient signal amplification in circuits.

Maximum Operating Temperature: 85 °C

Suitable for operation in a wide range of temperature conditions, ensuring reliability in various environments.

Maximum Collector-Emitter Voltage: 40 V

Can handle relatively high voltage levels, making it suitable for a range of voltage requirements in circuits.

Transistor Element Material: SILICON

Offers high performance and reliability, commonly used in semiconductor devices.

Maximum Collector Current (IC): 0.02 A

Can handle moderate current levels, suitable for various low-power amplifier applications.

Terminal Finish: MATTE TIN

Provides good electrical conductivity and corrosion resistance for reliable connections.

Nominal Transition Frequency (fT): 200 MHz

Indicates the speed at which the transistor can switch and amplify signals, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SSM2210SZ-REEL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SSM2210SZ-REEL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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